M28W160ECB70ZB6 Micron Technology Inc, M28W160ECB70ZB6 Datasheet
M28W160ECB70ZB6
Specifications of M28W160ECB70ZB6
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M28W160ECB70ZB6 Summary of contents
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... Manufacturer Code: 20h – Top Device Code, M28W160ECT: 88CEh – Bottom Device Code, M28W160ECB: 88CFh ■ ECOPACK PACKAGES AVAILABLE March 2008 M28W160ECT M28W160ECB 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory Figure 1. Packages FBGA TFBGA46 (ZB) 6.39 x 6.37mm TSOP48 ( 20mm 1/50 ...
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M28W160ECT, M28W160ECB TABLE OF CONTENTS FEATURES SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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Program/Erase Resume Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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... Table 22. Daisy Chain Ordering Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 APPENDIX A.BLOCK ADDRESS TABLES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 Table 23. Top Boot Block Addresses, M28W160ECT Table 24. Bottom Boot Block Addresses, M28W160ECB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 APPENDIX B.COMMON FLASH INTERFACE (CFI Table 25. Query Structure Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 Table 26. CFI Query Identification String Table 27. CFI Query System Interface Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 Table 28 ...
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... SUMMARY DESCRIPTION The M28W160EC Mbit (1 Mbit x 16) non- volatile Flash memory that can be erased electri- cally at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. V allows to drive the I/O pin DDQ down to 1 ...
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M28W160ECT, M28W160ECB Figure 2. Logic Diagram DDQ A0-A19 W E M28W160ECT M28W160ECB Figure 3. TSOP Connections 6/50 Table 1. Signal Names A0-A19 DQ0-DQ15 DQ0-DQ15 W RP ...
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Figure 4. TFBGA Connections (Top view through package A13 B A14 C A15 D A16 E V DDQ Figure 5. Block Addresses M28W160ECT Top Boot Block Addresses FFFFF 4 KWords FF000 F8FFF 4 KWords F8000 ...
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M28W160ECT, M28W160ECB Figure 6. Security Block and Protection Register Memory Map SECURITY BLOCK Parameter Block # 0 8/50 PROTECTION REGISTER 88h User Programmable OTP 85h 84h Unique device number 81h Protection Register Lock 80h AI03523 ...
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SIGNAL DESCRIPTIONS See Figure 2., Logic Diagram Names, for a brief overview of the signals connect this device. Address Inputs (A0-A19). The Address Inputs select the cells in the memory array to access dur- ing Bus Read operations. ...
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... Read. Read Bus operations are used to output the contents of the Memory Array, the Electronic Signature, the Status Register and the Common Flash Interface. Both Chip Enable and Output En- able must order to perform a read op- IL eration. The Chip Enable input should be used to enable the device ...
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... Lock Register. See Tables 4, the valid address. Read CFI Query Command The Read Query Command is used to read data from the Common Flash Interface (CFI) Memory Area, allowing programming equipment or appli- cations to automatically match their interface to the characteristics of the device. One Bus Write cycle is required to issue the Read Query Com- mand ...
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M28W160ECT, M28W160ECB Programming aborts if Reset goes to V integrity cannot be guaranteed when the program operation is aborted, the block containing the memory location must be erased and repro- grammed. See APPENDIX C., Figure 17., Program Flow- chart and ...
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Register error. The protection of the Protection Register and/or the Security Block is not revers- ible. The Protection Register Program cannot be sus- pended. See APPENDIX 23., Protection Register Program Flowchart and Pseudo Code, for the flowchart for using the ...
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M28W160ECT, M28W160ECB Table 3. Commands No. of Commands Cycles Read Memory Array 1+ Read Status Register 1+ Read Electronic Signature 1+ Read CFI Query 1+ Erase 2 Program 2 (3) 3 Double Word Program Clear Status Register 1 Program/Erase Suspend ...
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Table 5. Read Block Lock Signature Block Status Locked Block Unlocked Block IL IL Locked-Down Block Note Locked-Down Block can be locked "DQ0 = 1" or ...
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M28W160ECT, M28W160ECB BLOCK LOCKING The M28W160EC features an instant, individual block locking scheme that allows any block to be locked or unlocked with no latency. This locking scheme has three levels of protection. ■ Lock/Unlock - this first level allows ...
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Table 8. Block Lock Status Item Block Lock Configuration Block is Unlocked Block is Locked Block is Locked-Down Table 9. Protection Status Current (1) Protection Status (WP, DQ1, DQ0) Program/Erase Current State Allowed 1,0,0 yes (2) no 1,0,1 1,1,0 yes ...
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M28W160ECT, M28W160ECB STATUS REGISTER The Status Register provides information on the current or previous Program or Erase operation. The various bits convey information and errors on the operation. To read the Status register the Read Status Register command can be ...
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Controller Status bit is High (Program/ Erase Controller inactive). Bit 2 is set within 5µs of the Program/Erase Suspend command being is- sued therefore the memory may still complete the operation rather than entering the Suspend mode. When a ...
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M28W160ECT, M28W160ECB MAXIMUM RATING Stressing the device above the rating listed in the Absolute Maximum Ratings table may cause per- manent damage to the device. These are stress ratings only and operation of the device at these or any other ...
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DC AND AC PARAMETERS This section summarizes the operating and mea- surement conditions, and the DC and AC charac- teristics of the device. The parameters in the DC and AC characteristics Tables that follow, are de- rived from tests performed ...
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M28W160ECT, M28W160ECB Table 14. DC Characteristics Symbol Parameter I Input Leakage Current LI I Output Leakage Current LO I Supply Current (Read) DD Supply Current (Stand- DD1 Automatic Stand-by) Supply Current I DD2 (Reset) I Supply Current (Program) ...
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Figure 9. Read Mode AC Waveforms A0-A19 E G DQ0-DQ15 ADDR. VALID CHIP ENABLE Table 15. Read AC Characteristics Symbol Alt t t Address Valid to Next Address Valid AVAV Address Valid to Output Valid AVQV ACC ...
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M28W160ECT, M28W160ECB Figure 10. Write AC Waveforms, Write Enable Controlled 24/50 ...
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Table 16. Write AC Characteristics, Write Enable Controlled Symbol Alt t t Write Cycle Time AVAV Address Valid to Write Enable High AVWH Data Valid to Write Enable High DVWH Chip ...
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M28W160ECT, M28W160ECB Figure 11. Write AC Waveforms, Chip Enable Controlled 26/50 ...
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Table 17. Write AC Characteristics, Chip Enable Controlled Symbol Alt t t Write Cycle Time AVAV Address Valid to Chip Enable High AVEH Data Valid to Chip Enable High DVEH Chip ...
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M28W160ECT, M28W160ECB Figure 12. Power-Up and Reset AC Waveforms tVDHPH VDD, VDDQ Table 18. Power-Up and Reset AC Characteristics Symbol Parameter t PHWL Reset High to Write Enable Low, Chip t PHEL Enable Low, Output Enable ...
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PACKAGE MECHANICAL Figure 13. TSOP48 - 48 lead Plastic Thin Small Outline 20mm, Package Outline DIE Note: Drawing is not to scale. Table 19. TSOP48 - 48 lead Plastic Thin Small Outline, 12 ...
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M28W160ECT, M28W160ECB Figure 14. TFBGA46 6.39x6.37mm - 8x6 ball array, 0.75mm pitch, Bottom View Package Outline BALL "A1" A Drawing is not to scale. Table 20. TFBGA46 6.39x6.37mm - 8x6 ball array, 0.75mm pitch, Package Mechanical ...
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Figure 15. TFBGA46 Daisy Chain - Package Connections (Top view through package Figure 16. TFBGA46 Daisy Chain - PCB Connections proposal (Top view through package ...
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M28W160ECT, M28W160ECB PART NUMBERING Table 21. Ordering Information Scheme Example: Device Type M28 Operating Voltage 2.7V to 3.6V 1.65V to 3.6V DD DDQ Device Function 160EC = 16 Mbit (1 Mb x16), Boot Block ...
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Table 22. Daisy Chain Ordering Scheme Example: Device Type M28W160EC Daisy Chain -ZB = TFBGA46: 6.39 x 6.37mm, 0.75 mm pitch Option T = Tape & Reel Packing S = Tape & Reel Packing, 16mm (BGA only) Devices are shipped ...
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M28W160ECT, M28W160ECB APPENDIX A. BLOCK ADDRESS TABLES Table 23. Top Boot Block Addresses, M28W160ECT Size # Address Range (KWord FF000-FFFFF 1 4 FE000-FEFFF 2 4 FD000-FDFFF 3 4 FC000-FCFFF 4 4 FB000-FBFFF 5 4 FA000-FAFFF 6 4 F9000-F9FFF ...
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... APPENDIX B. COMMON FLASH INTERFACE (CFI) The Common Flash Interface is a JEDEC ap- proved, standardized data structure that can be read from the Flash memory device. It allows a system software to query the device to determine various electrical and timing parameters, density information and functions supported by the mem- ory ...
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M28W160ECT, M28W160ECB Table 27. CFI Query System Interface Information Offset Data V Logic Supply Minimum Program/Erase or Write voltage DD 1Bh 0027h bit 7 to 4BCD value in volts bit 3 to 0BCD value in 100 mV V Logic Supply ...
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... Table 28. Device Geometry Definition Offset Word Data Mode 27h 0015h Device Size = 2 28h 0001h Flash Device Interface Code description 29h 0000h 2Ah 0002h Maximum number of bytes in multi-byte program or page = 2 2Bh 0000h Number of Erase Block Regions within the device. 2Ch 0002h It specifies the number of regions within the device containing contiguous Erase Blocks of the same size ...
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M28W160ECT, M28W160ECB Table 29. Primary Algorithm-Specific Extended Query Table Offset Data ( 35h (P+0)h = 35h 0050h (P+1)h = 36h 0052h Primary Algorithm extended Query table unique ASCII string “PRI” (P+2)h = 37h 0049h (P+3)h = 38h 0031h ...
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Table 30. Security Code Area Offset Data 80h 00XX Protection Register Lock 81h XXXX 82h XXXX 64 bits: unique device number 83h XXXX 84h XXXX 85h XXXX 86h XXXX 64 bits: User Programmable OTP 87h XXXX 88h XXXX M28W160ECT, M28W160ECB ...
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... Note: 1. Status check of b1 (Protected Block sequence error is found, the Status Register must be cleared before further Program/Erase Controller operations. 40/50 program_command (addressToProgram, dataToProgram) {: writeToFlash (any_address, 0x40) ; /*or writeToFlash (any_address, 0x10 writeToFlash (addressToProgram, dataToProgram) ; /*Memory enters read status state after the Program Command status_register=readFlash (any_address) ; ...
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... If an error is found, the Status Register must be cleared before further Program/Erase operations. 3. Address 1 and Address 2 must be consecutive addresses differing only for bit A0. double_word_program_command (addressToProgram1, dataToProgram1, { writeToFlash (any_address, 0x30) ; writeToFlash (addressToProgram1, dataToProgram1) ; writeToFlash (addressToProgram2, dataToProgram2) ; /*Memory enters read status state after the Program command status_register=readFlash (any_address must be toggled*/ } while (status_register.b7== 0) ...
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... must be toggled*/ } while (status_register.b7 writeToFlash (any_address, 0xFF) ; read_data ( ) ; /*read data from another block*/ /*The device returns to Read Array (as if program/erase suspend was not issued).*/ } { writeToFlash (any_address, 0xFF) ; read_data ( ); /*read data from another address*/ writeToFlash (any_address, 0xD0) ; /*write 0xD0 to resume program*/ } AI03540b ...
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... YES YES End Note error is found, the Status Register must be cleared before further Program/Erase operations. erase_command ( blockToErase ) { writeToFlash (any_address, 0x20) ; writeToFlash (blockToErase, 0xD0 only A12-A20 are significannt */ /* Memory enters read status state after the Erase Command */ do { status_register=readFlash (any_address must be toggled*/ } while (status_register.b7 ...
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... must be toggled*/ } while (status_register.b7 writeToFlash (any_address, 0xFF) ; read_data ( ) ; /*read data from another block*/ /*The device returns to Read Array (as if program/erase suspend was not issued).*/ } { writeToFlash (any_address, 0xFF) ; read_program_data ( ); /*read or program data from another address*/ writeToFlash (any_address, 0xD0) ; /*write 0xD0 to resume erase*/ } AI03542b ...
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... NO error_handler () ; /*Check the locking state (see Read Block Signature table )*/ writeToFlash (any_address, 0xFF) ; /*Reset to Read Array mode*/ } M28W160ECT, M28W160ECB AI04364 45/50 ...
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... End Note: 1. Status check of b1 (Protected Block sequence error is found, the Status Register must be cleared before further Program/Erase Controller operations. 46/50 protection_register_program_command (addressToProgram, dataToProgram) {: writeToFlash (any_address, 0xC0) ; writeToFlash (addressToProgram, dataToProgram) ; /*Memory enters read status state after the Program Command status_register=readFlash (any_address) ; ...
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APPENDIX D. COMMAND INTERFACE AND PROGRAM/ERASE CONTROLLER STATE Table 31. Write State Machine Current/Next, sheet Data Current SR Read When State bit 7 Array Read (FFh) Read Array “1” Array Read Array Prog.Setup Read “1” Status Read ...
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M28W160ECT, M28W160ECB Table 32. Write State Machine Current/Next, sheet Current State Read Elect.Sg. (90h) Read Array Read Elect.Sg. Read CFI Query Read Status Read Elect.Sg. Read CFI Query Read Elect.Sg. Read Elect.Sg. Read CFI Query Read CFI ...
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REVISION HISTORY Table 33. Document Revision History Date Version 21-Nov-2002 1.0 18-Feb-2004 2.0 1-July-2004 3.0 5-Aug-2004 4.0 16-Nov-2004 5.0 01-Dec-2005 6 26-Mar-2008 7 Revision Details First Issue S packing option added to Table 21., Ordering Information Scheme 22., Daisy Chain ...
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... Contact your local Numonyx sales office or your distributor to obtain the latest specifications and before placing your product order. Copies of documents which have an order number and are referenced in this document, or other Numonyx literature may be obtained by Numonyx StrataFlash is a trademark or registered trademark of Numonyx or its subsidiaries in the United States and other countries. *Other names and brands may be claimed as the property of others. ...