TE28F004B5B80 Intel, TE28F004B5B80 Datasheet - Page 8

• Manufacturer Part Number: TE28F004B5B80
• Manufacturer: Intel

Specifications of TE28F004B5B80

• Cell Type: NOR
• Density: 4Mb
• Access Time (max): 80ns
• Interface Type: Parallel
• Boot Type: Bottom
• Address Bus: 19b
• Operating Supply Voltage (typ): 5V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Word Size: 8b
• Number Of Words: 512K
• Supply Current: 70mA
• Mounting: Surface Mount
• Pin Count: 40
• Lead Free Status / Rohs Status: Not Compliant

28F200B5, 28F004/400B5, 28F800B5
2.2
Intel
upgrade paths in each package pinout up to the
8-Mbit density. The 44-lead PSOP pinout follows
the industry-standard ROM/EPROM pinout, as
shown in Figure 1. Designs with space concerns
should consider the 48-lead pinout shown in
Figure 2. Applications using an 8-bit bus can use
the 40-lead TSOP, which is available for the 4-Mbit
device only.
8
WP#
BYTE#
V
V
GND
NC
CC
PP
Symbol
®
5 Volt Boot Block Flash architecture provides
Pinouts
INPUT
INPUT
Type
WRITE PROTECT: Provides a method for unlocking the boot block with a logic
level signal in a system without a 12 V supply.
When WP# is at logic low, the boot block is locked, preventing program and
erase operations to the boot block. If a program or erase operation is attempted
on the boot block when WP# is low, the corresponding status bit (bit 4 for
program, bit 5 for erase) will be set in the status register to indicate the operation
failed.
When WP# is at logic high, the boot block is unlocked and can be
programmed or erased.
NOTE: This feature is overridden and the boot block unlocked when RP# is at
V
not have enough pins, it does not include this pin and thus 12 V on RP# is
required to unlock the boot block. See Section 3.3 for details on write protection.
BYTE# ENABLE: Configures whether the device operates in byte-wide mode (x8)
or word-wide mode (x16). This pin must be set at power-up or return from deep
power-down and not changed during device operation. BYTE# pin must be
controlled at CMOS levels to meet the CMOS current specification in standby
mode.
When BYTE# is at logic low, the byte-wide mode is enabled, where data is
read and programmed on DQ
address that decodes between the upper and lower byte. DQ
during the byte-wide mode.
When BYTE# is at logic high, the word-wide mode is enabled, where data is
read and programmed on DQ
Not applicable to 28F004B5.
DEVICE POWER SUPPLY: 5.0 V
PROGRAM/ERASE POWER SUPPLY: For erasing memory array blocks or
programming data in each block, a voltage either of 5 V
be applied to this pin. When V
against Program and Erase commands.
GROUND: For all internal circuitry.
NO CONNECT: Pin may be driven or left floating.
HH
. This pin can not be left floating. Because the 8-Mbit 44-PSOP package does
Table 2. Pin Descriptions (Continued)
0
0
PP
–DQ
–DQ
Name and Function
Pinouts for the corresponding 2-, 4-, and 8-Mbit
components are provided on the same diagram for
convenient reference. 2-Mbit pinouts are given on
the chip illustration in the center, with 4-Mbit and
8-Mbit pinouts going outward from the center.
< V
7
15
PPLK
and DQ
10%
.
all blocks are locked and protected
15
/A
–1
becomes the lowest order
PRELIMINARY
10% or 12 V
8
–DQ
14
are tri-stated
5% must