TE28F008B3TA90 Intel, TE28F008B3TA90 Datasheet - Page 59

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TE28F008B3TA90

Manufacturer Part Number
TE28F008B3TA90
Description
Manufacturer
Intel
Datasheet

Specifications of TE28F008B3TA90

Cell Type
NOR
Density
8Mb
Access Time (max)
90ns
Interface Type
Parallel
Boot Type
Top
Address Bus
19b
Operating Supply Voltage (typ)
3/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
16b
Number Of Words
512K
Supply Current
18mA
Mounting
Surface Mount
Pin Count
40
Lead Free Status / Rohs Status
Not Compliant
Datasheet
Table 28. Command Bus Definitions
Erase Resume continues the erase sequence when CE# = V
operation, the Status Register must be read and cleared before the next instruction is issued.
NOTES:
1. Bus operations are defined in
2. Following the Intelligent Identifier command, two Read operations access manufacturer and device codes.
3. Either 40H or 10H command is valid although the standard is 40H.
4. When writing commands to the device, the upper data bus [DQ
Read Array
Read Identifier
Read Status Register
Clear Status Register
Program
Block Erase/Confirm
Program/Erase Suspend
Program/Erase Resume
A
minimize current draw.
0
= 0 for manufacturer code, A
PA: Program Address
IA: Identifier Address
Command
PD: Program Data
ID: Identifier Data
Notes
Table
2
3
0
(1,4)
= 1 for device code. A
25.
28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
Oper
Write
Write
Write
Write
Write
Write
Write
Write
First Bus Cycle
BA: Block Address
SRD: Status Register Data
Addr
X
X
X
X
X
X
X
X
1
–A
21
= 0.
IL
8
40H /
–DQ
Data
FFH
B0H
D0H
90H
70H
50H
10H
20H
. As with the end of a standard Erase
15
] must be either V
Oper
Read
Read
Write
Write
Second Bus Cycle
Addr
BA
PA
IL
IA
X
or V
IH
, to
Data
SRD
D0H
PD
ID
59

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