28F640J3A120

Manufacturer Part Number28F640J3A120
DescriptionIntel Strataflash Memory28F128J3 28F640J3 28F320J3
ManufacturerIntel Corporation
28F640J3A120 datasheet
 
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3 Volt Intel StrataFlash
28F128J3, 28F640J3, 28F320J3 (x8/x16)
Product Features
Performance
— 110/115/120/150 ns Initial Access Speed
— 25 ns Asynchronous Page-Mode Reads
— 32-Byte Write Buffer
—6.8 µs per Byte Effective
Programming Time
Software
— Program and Erase suspend support
— Flash Data Integrator (FDI), Common
Flash Interface (CFI) Compatible
Security
— 128-bit Protection Register
—64-bit Unique Device Identifier
—64-bit User Programmable OTP Cells
— Absolute Protection with V
PEN
— Individual Block Locking
— Block Erase/Program Lockout during
Power Transitions
Capitalizing on Intel’s 0.25 and 0.18 micron, two-bit-per-cell technology, the 3 Volt Intel StrataFlash
(J3) device provides 2X the bits in 1X the space, with new features for mainstream performance. Offered in
128-Mbit (16-Mbyte), 64-Mbit, and 32-Mbit densities, the J3 device brings reliable, two-bit-per-cell storage
technology to the flash market segment. Benefits include: more density in less space, high-speed interface,
lowest cost-per-bit NOR device, support for code and data storage, and easy migration to future devices.
Using the same NOR-based ETOX™ technology as Intel’s one-bit-per-cell products, the J3 device takes
advantage of over one billion units of flash manufacturing experience since 1987. As a result, J3 components
are ideal for code and data applications where high density and low cost are required. Examples include
networking, telecommunications, digital set top boxes, audio recording, and digital imaging.
By applying FlashFile™ memory family pinouts, J3 memory components allow easy design migrations from
existing Word-Wide FlashFile memory (28F160S3 and 28F320S3), and first generation Intel StrataFlash
memory (28F640J5 and 28F320J5) devices.
J3 memory components deliver a new generation of forward-compatible software support. By using the
Common Flash Interface (CFI) and the Scalable Command Set (SCS), customers can take advantage of density
upgrades and optimized write capabilities of future Intel StrataFlash
0.18 micron ETOX™ VII (J3C) and 0.25 micron ETOX™ VI (J3A) process technology, the J3 memory device
provides the highest levels of quality and reliability.
Notice: This document contains information on new products in production. The specifications are
subject to change without notice. Verify with your local Intel sales office that you have the latest
datasheet before finalizing a design.
®
Memory
Architecture
— Multi-Level Cell Technology: High
Density at Low Cost
— High-Density Symmetrical 128-Kbyte
Blocks
—128 Mbit (128 Blocks)
— 4 Mbit (64 Blocks)
—32 Mbit (32 Blocks)
Quality and Reliability
— Operating Temperature:
-40 °C to +85 °C
— 100K Minimum Erase Cycles per Block
— 0.18 µm ETOX™ VII Process (J3C)
— 0.25 µm ETOX™ VI Process (J3A)
Packaging and Voltage
= GND
— 56-Lead TSOP Package
— 64-Ball Intel
®
Easy BGA Package
— 48-Ball Intel
VF BGA Package (32 and
®
64 Mbit) (x16 only)
— V
= 2.7 V – 3.6 V
CC
— V
= 2.7 V – 3.6 V
CCQ
®
memory devices. Manufactured on Intel
Order Number: 290667-013
Datasheet
®
Memory
®
®
February 2003

28F640J3A120 Summary of contents