K6T1008C2C-TF70 Samsung Semiconductor, K6T1008C2C-TF70 Datasheet - Page 2

• Manufacturer Part Number: K6T1008C2C-TF70
• Manufacturer: Samsung Semiconductor

Specifications of K6T1008C2C-TF70

• Density: 1Mb
• Access Time (max): 70ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 5V
• Address Bus: 17b
• Package Type: TSOP-I
• Operating Temp Range: -40C to 85C
• Number Of Ports: 1
• Supply Current: 60mA
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 32
• Word Size: 8b
• Number Of Words: 128K
• Lead Free Status / Rohs Status: Not Compliant

VSS
PIN DESCRIPTION
I/O1
I/O2
I/O3
N.C
A16
A14
A12
128K x8 bit Low Power CMOS Static RAM
PRODUCT FAMILY
FEATURES
K6T1008C2C Family
A7
A6
A5
A4
A3
A2
A1
A0
K6T1008C2C-L
K6T1008C2C-B
K6T1008C2C-P
K6T1008C2C-F
Product Family
Process Technology: TFT
Organization: 128K x8
Low Data Retention Voltage: 2V(Min)
Package Type: 32-DIP-600, 32-SOP-525,
Power Supply Voltage: 4.5~5.5V
Three state output and TTL Compatible
CS
A
Name
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
0
WE
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
OE
1
~A
,CS
16
32-SOP
32-DIP
2
Chip Select Inputs
Output Enable
Write Enable Input
Address Inputs
32-TSOP1-0820F/R
Function
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Operating Temperature
Commercial(0~70 C)
VCC
A15
CS2
WE
A13
A8
A9
A11
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
Industrial(-40~85 C)
VCC
VCC
A13
CS2
A15
A14
A14
A15
CS2
A13
A11
N.C
A16
A12
A12
A16
N.C
A11
WE
WE
A9
A7
A6
A5
A4
A4
A5
A6
A7
A9
A8
A8
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
I/O
Name
Vcc
Vss
N.C
1
Type1 - Reverse
Type1 - Forward
~I/O
32-TSOP
32-TSOP
8
Data Inputs/Outputs
Power
Ground
No Connection
Vcc Range
4.5~5.5V
Function
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
I/O4
I/O5
I/O6
I/O7
I/O8
CS1
A10
OE
2
55/70ns
Speed
70ns
FUNCTIONAL BLOCK DIAGRAM
GENERAL DESCRIPTION
advanced CMOS process technology. The families support
various operating temperature ranges and have various
package types for user flexibility of system design. The fami-
lies also support low data retention voltage for battery back-
up operation with low data retention current.
The K6T1008C2C families are fabricated by SAMSUNG s
CS1
CS2
WE
OE
I/O
I/O
1
8
Control
logic
A4
A5
A6
A7
A8
A12
A13
A14
A15
A16
(I
Standby
SB1
50 A
10 A
50 A
15 A
Power Dissipation
, Max)
Clk gen.
Row
select
Data
cont
Data
cont
(I
Operating
CC2
60mA
, Max)
A0
CMOS SRAM
A1 A2
Precharge circuit.
Memory array
1024 rows
128 8 columns
Column select
I/O Circuit
32-DIP, 32-SOP
32-TSOP1-F/R
32-SOP
32-TSOP1-F/R
A3 A9
November 1997
PKG Type
Revision 2.0
A10
A11
V
V
CC
SS