M29W800AT90M1 Micron Technology Inc, M29W800AT90M1 Datasheet

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... ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code, M29W800AT: D7h – Bottom Device Code, M29W800AB: 5Bh March 2004 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory Figure 1. Packages TSOP48 ( 20mm Figure 2. Logic Diagram A0-A18 ...

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M29W800AT, M29W800AB TABLE OF CONTENTS FEATURES SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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INSTRUCTIONS AND COMMANDS ...

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M29W800AT, M29W800AB Figure 11.Read and Write AC Characteristics, RP Related . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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DESCRIPTION The M29W800A is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Word-by-Word basis using only a single 2.7V to 3.6V V supply. For Program and Erase ...

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M29W800AT, M29W800AB Command Interface Instructions, made up of commands written in cy- cles, can be given to the Program/Erase Controller through a Command Interface (C.I.). For added data protection, program or erase execution starts after cycles. The ...

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Figure 5. TFBGA Connections (Top view through package A17 A18 ...

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M29W800AT, M29W800AB Table 2. Top Boot Block Addresses, M29W800AT Size Address Range # (Kbytes) (x8 FC000h-FFFFFh 17 8 FA000h-FBFFFh 16 8 F8000h-F9FFFh 15 32 F0000h-F7FFFh 14 64 E0000h-EFFFFh 13 64 D0000h-DFFFFh 12 64 C0000h-CFFFFh 11 64 B0000h-BFFFFh 10 ...

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SIGNAL DESCRIPTIONS See Figure 2., Logic Diagram Names. Address Inputs (A0-A18). The address inputs for the memory array are latched during a write op- eration on the falling edge at Chip Enable E or Write Enable W. In Word-wide organisation ...

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M29W800AT, M29W800AB DEVICE OPERATIONS See Table 4., User Bus Operations 5., Read Electronic Signature (following AS in- struction or with and ID Block Protection with AS Instruction. Read. Read operations are used to output the contents ...

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Table 4. User Bus Operations Operation Read Word Read Byte Write Word Write Byte IL IH ...

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M29W800AT, M29W800AB INSTRUCTIONS AND COMMANDS The Command Interface latches commands writ- ten to the memory. Instructions are made up from one or more commands to perform Read Memory Array, Read Electronic Signature, Read Block Pro- tection, Program, Block Erase, Chip ...

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Cod- ed cycles. The erase will start after the erase tim- eout period (see Erase Timer Bit DQ3 description). Thus, additional Erase Confirm commands for oth- ...

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M29W800AT, M29W800AB (1) Table 8. Instructions Mne. Instr. Cyc. Addr. 1+ Data Read/Reset (2,4) Memory RD Addr. Array (3,7) 3+ Data Addr. (3,7) (4) Auto Select 3+ AS Data Addr. (3,7) PG Program 4 Data Addr. (3,7) BE Block Erase ...

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STATUS REGISTER P/E.C. status is indicated during execution by Data Polling on DQ7, detection of Toggle on DQ6 and DQ2, or Error on DQ5 and Erase Timer DQ3 bits. Any read attempt during Program or Erase com- mand execution will ...

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M29W800AT, M29W800AB Table 10. Status Register Bits DQ Name Logic Level ’1’ ’0’ Data 7 Polling DQ DQ ’-1-0-1-0-1-0-1-’ Toggle Bit ’-1-1-1-1-1-1-1-’ ’1’ 5 Error Bit ’0’ 4 Reserved ’1’ Erase 3 Time Bit ’0’ ’-1-0-1-0-1-0-1-’ 2 Toggle ...

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MAXIMUM RATING Table 11. Absolute Maximum Ratings Symbol T Ambient Operating Temperature A T Temperature Under Bias BIAS T Storage Temperature STG (2) Input or Output Voltage Supply Voltage CC (2) A9 Voltage V ...

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M29W800AT, M29W800AB DC AND AC CHARACTERISTICS Figure 6. AC Testing Input Output Waveform 3V 0V Table 12. AC Measurement Conditions Input Rise and Fall Times Input Pulse Voltages Input and Output Timing Ref. Voltages (1) Table 13. Capacitance (T A ...

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Table 15. Read AC Characteristics ( 70°C, –20 to 85°C or –40 to 85°C) A Symbol Alt Parameter Address Valid to Next t t AVAV RC Address Valid Address Valid to Output t t AVQV ACC Valid ...

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M29W800AT, M29W800AB Table 16. Read AC Characteristics ( 70°C, –20 to 85°C or –40 to 85°C) A Symbol Alt Parameter Address Valid to Next t t AVAV RC Address Valid Address Valid to Output t t AVQV ...

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Figure 8. Read Mode AC Waveforms M29W800AT, M29W800AB 21/40 ...

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M29W800AT, M29W800AB Table 17. Write AC Characteristics, W Controlled ( 70°C, –20 to 85°C or –40 to 85°C) A Symbol Alt t t Address Valid to Next Address Valid AVAV Address Valid to Write ...

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Table 18. Write AC Characteristics, W Controlled ( 70°C, –20 to 85°C or –40 to 85°C) A Symbol Alt t t Address Valid to Next Address Valid AVAV Address Valid to Write Enable Low ...

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M29W800AT, M29W800AB Table 19. Write AC Characteristics, E Controlled ( 70°C, –20 to 85°C or –40 to 85°C) A Symbol Alt t t Address Valid to Next Address Valid AVAV Address Valid to Chip ...

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Table 20. Write AC Characteristics, E Controlled ( 70°C, –20 to 85°C or –40 to 85°C) A Symbol Alt t t Address Valid to Next Address Valid AVAV Address Valid to Chip Enable Low ...

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M29W800AT, M29W800AB Figure 9. Write AC Waveforms, W Controlled A0-A18/ A– DQ0-DQ7/ DQ8-DQ15 V CC tVCHEL RB Note: Address are latched on the falling edge of W, Data is latched on the rising edge of W. 26/40 ...

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Figure 10. Write AC Waveforms, E Controlled A0-A18/ A– DQ0-DQ7/ DQ8-DQ15 V CC tVCHWL RB Note: Address are latched on the falling edge of E, Data is latched on the rising edge of E. Figure 11. Read ...

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M29W800AT, M29W800AB Figure 12. Data Polling and Toggle Bit AC Characteristics ( 70°C, –20 to 85°C or –40 to 85°C) A Symbol Chip Enable High to DQ7 Valid (Program, E Controlled) t EHQ7V Chip Enable High to ...

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Figure 13. Data Polling DQ7 AC Waveforms M29W800AT, M29W800AB 29/40 ...

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M29W800AT, M29W800AB Figure 14. Data Toggle DQ6, DQ2 AC Waveforms 30/40 ...

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Figure 15. Data Polling Flowchart START READ DQ5 & DQ7 at VALID ADDRESS DQ7 YES = DATA NO NO DQ5 = 1 YES READ DQ7 DQ7 YES = DATA NO FAIL Table 22. Program, Erase Times and Program, Erase Endurance ...

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M29W800AT, M29W800AB POWER SUPPLY Power Up The memory Command Interface is reset on pow Read Array. The device does not accept commands on the first rising edge both W and E are at V ...

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SECURITY PROTECTION MEMORY AREA The M29W800A features a security protection memory area. It consists of a memory block of 256 bytes or 128 words which is programmed in the ST factory to store a unique code that uniquely identi- fies ...

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M29W800AT, M29W800AB PACKAGE MECHANICAL Figure 18. TSOP48, 48 Lead Plastic Thin Small Outline, 12x20 mm - Package Outline DIE Table 24. TSOP48, 48 Lead Plastic Thin Small Outline, 12x20 mm - Package Mechanical Data Symbol ...

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Figure 19. TFBGA48 Ball Array, 0.8mm Pitch - Bottom View Package Outline FD FE BALL "A1" Table 25. TFBGA48 Ball Array, 0.8mm Pitch - Package Mechanical Data Symbol Typ A A1 ...

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M29W800AT, M29W800AB Figure 20. TFBGA48 Daisy Chain Connections (Top view through package Figure 21. TFBGA48 Daisy Chain - PCB Connections (Top view through package) START POINT ...

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Figure 22. SO44 , Small Outline, 525mm Body Width - Package Outline Table 26. SO44 , Small Outline, 525mm Body Width Package Mechanical Data Symbol Typ 2.30 b 0.40 C 0.15 CP ...

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M29W800AT, M29W800AB PART NUMBERING Table 27. Ordering Information Scheme Example: Device Type M29 Operating Voltage W = 2.7 to 3.6V Device Function 800A = 8 Mbit (1Mb x8 or 512Kb x16), Boot Block Array Matrix T = Top Boot B ...

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REVISION HISTORY Table 29. Revision History Date Version November 1998 -01 First issue February 1999 -02 Removed TSOP48 Package Reverse Pinout March 1999 -03 Program, Erase Times and Erase Endurance Cycles change New document template Document type: from Preliminary Data ...

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M29W800AT, M29W800AB Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequ of use of such information nor for any infringement of patents or other rights of third parties which may result from ...