TE28F128J3D75 Micron Technology Inc, TE28F128J3D75 Datasheet - Page 53

• Manufacturer Part Number: TE28F128J3D75
• Manufacturer: Micron Technology Inc

Specifications of TE28F128J3D75

• Cell Type: NOR
• Density: 128Mb
• Access Time (max): 75ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 24/23Bit
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 16M/8M
• Mounting: Surface Mount
• Pin Count: 56
• Lead Free Status / Rohs Status: Not Compliant

Numonyx™ Embedded Flash Memory (J3 v. D)
Figure 25: Block Erase Flowchart
November 2007
308551-05
Issue Single Block Erase
Command 20H, Block
Write Confirm D0H
Block(s) Complete
Check if Desired
Status Register
Block Address
Erase Flash
Full Status
Address
SR.7 =
Read
Start
1
0
Suspend Erase
No
Yes
1. The Erase Confirm byte must follow Erase Setup.
This device does not support erase queuing. Please see
Application note AP-646 For software erase queuing
compatibility.
Full status check can be done after all erase and write
sequences complete. Write FFH after the last operation to
reset the device to read array mode.
Erase Loop
Write (Note 1)
Suspend
Operation
Standby
Write
Read
Bus
Erase Block
Command
Confirm
Erase
Data = 20H
Addr = Block Address
Data = D0H
Addr = Block Address
Status register data
With the device enabled,
Addr = X
Check SR.7
1 = WSM Ready
0 = WSM Busy
OE# low updates SR
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