SI9925DY-T1 Vishay, SI9925DY-T1 Datasheet

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SI9925DY-T1

Manufacturer Part Number
SI9925DY-T1
Description
Manufacturer
Vishay
Type
Power MOSFETr
Datasheet

Specifications of SI9925DY-T1

Number Of Elements
2
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.045Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±12V
Continuous Drain Current
5A
Power Dissipation
2W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Lead Free Status / Rohs Status
Not Compliant

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Notes
a.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70145
S-03950—Rev. N, 26-May-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambient
V
Surface Mounted on FR4 Board, t v 10 sec.
DS
20
Ordering Information: Si9925DY
(V)
G
G
S
S
1
1
2
2
1
2
3
4
J
J
a
a
0.05 @ V
0.06 @ V
0.08 @ V
= 150_C)
= 150_C)
Si9925DY-T1 (with Tape and Reel)
a
Top View
SO-8
r
DS(on)
Dual N-Channel 2.5-V (G-S) MOSFET
Parameter
Parameter
GS
GS
GS
a
a
(W)
= 4.5 V
= 3.0 V
= 2.5 V
8
7
6
5
a
D
D
D
D
1
1
2
2
A
= 25_C UNLESS OTHERWISE NOTED)
I
D
5.0
4.2
3.6
(A)
T
T
T
T
A
A
A
A
= 25_C
= 70_C
= 25_C
= 70_C
N-Channel MOSFET
G
1
Symbol
Symbol
T
R
V
J
V
I
P
P
DM
, T
I
I
I
thJA
DS
GS
D
D
S
D
D
stg
D
1
S
1
D
1
N-Channel MOSFET
G
- 55 to 150
2
Vishay Siliconix
Limit
Limit
"12
62.5
5.0
4.0
1.7
1.3
20
48
2
D
2
Si9925DY
S
2
D
2
www.vishay.com
Unit
Unit
_C/W
_C
W
W
V
V
A
A
1

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SI9925DY-T1 Summary of contents

Page 1

... Top View Ordering Information: Si9925DY Si9925DY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction Maximum Power Dissipation Maximum Power Dissipation ...

Page 2

... Si9925DY Vishay Siliconix Specifications (T = 25_C Unless Otherwise Noted) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current b On-State Drain Current b b Drain Source On State Resistance Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltage ...

Page 3

... Q - Total Gate Charge (nC) g Document Number: 70145 S-03950—Rev. N, 26-May 1600 1200 800 = 3 V 400 2.0 1.6 1.2 0.8 0.4 0 Si9925DY Vishay Siliconix Transfer Characteristics 55_C C 32 25_C 24 125_C Gate-to-Source Voltage (V) GS Capacitance C C oss C rss Drain-to-Source Voltage (V) DS On-Resistance vs ...

Page 4

... Si9925DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C 0.4 0 Source-to-Drain Voltage (V) SD Threshold Voltage 0.4 0.2 = 250 µ 0.0 - 0.2 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 ...

Page 5

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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