SI9925DY-T1 Vishay, SI9925DY-T1 Datasheet - Page 4

• Manufacturer Part Number: SI9925DY-T1
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI9925DY-T1

• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.045Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Continuous Drain Current: 5A
• Power Dissipation: 2W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / Rohs Status: Not Compliant

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4
Si9925DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.01
0.1
- 0.0
- 0.2
- 0.4
- 0.6
0.4
0.2
40
10
2
1
1
10
- 50
0
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Source-Drain Diode Forward Voltage
V
SD
0.4
T
0
J
= 150_C
- Source-to-Drain Voltage (V)
T
Threshold Voltage
J
- Temperature (_C)
10
I
D
-3
0.8
50
= 250 µA
Normalized Thermal Transient Impedance, Junction-to-Ambient
T
J
= 25_C
Single Pulse
100
1.2
10
-2
Square Wave Pulse Duration (sec)
150
1.6
10
-1
0.18
0.15
0.12
0.09
0.06
0.03
0.00
40
32
24
16
0.01
8
0
0
On-Resistance vs. Gate-to-Source Voltage
V
GS
2
1
0.1
- Gate-to-Source Voltage (V)
Single Pulse Power
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
I
- T
Time (sec)
D
t
= 5 A
A
1
= P
t
4
2
DM
Z
S-03950—Rev. N, 26-May-03
1
thJA
thJA
Document Number: 70145
t
t
1
2
(t)
10
= 62.5_C/W
6
10
30
30
8