SI9925DY-T1 Vishay, SI9925DY-T1 Datasheet - Page 3

• Manufacturer Part Number: SI9925DY-T1
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI9925DY-T1

• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.045Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Continuous Drain Current: 5A
• Power Dissipation: 2W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / Rohs Status: Not Compliant

Document Number: 70145
S-03950—Rev. N, 26-May-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.20
0.16
0.12
0.08
0.04
0.00
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
40
32
24
16
8
0
0
0
0
V
V
I
D
GS
DS
= 5 A
On-Resistance vs. Drain Current
= 2.5 V
= 6 V
V
2
6
2
DS
Q
Output Characteristics
g
- Drain-to-Source Voltage (V)
I
D
V
- Total Gate Charge (nC)
GS
- Drain Current (A)
Gate Charge
12
4
4
= 5.5, 5, 4.5, 4, 3.5 V
V
18
6
6
GS
3 V
= 3 V
V
GS
= 4.5 V
24
2 V
8
8
2.5 V
1.5 V
10
30
10
1600
1200
800
400
2.0
1.6
1.2
0.8
0.4
0.0
40
32
24
16
8
0
0
- 50
0
0
On-Resistance vs. Junction Temperature
V
I
D
GS
= 5 A
V
1
V
4
= 10 V
DS
GS
C
T
Transfer Characteristics
0
rss
J
- Junction Temperature (_C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
T
Capacitance
C
2
8
25_C
= - 55_C
C
Vishay Siliconix
50
oss
12
3
Si9925DY
125_C
100
C
16
4
www.vishay.com
iss
150
20
5
3