SI9925DY-T1 Vishay, SI9925DY-T1 Datasheet - Page 2

• Manufacturer Part Number: SI9925DY-T1
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of SI9925DY-T1

• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.045Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Continuous Drain Current: 5A
• Power Dissipation: 2W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / Rohs Status: Not Compliant

Notes
a.
b.
www.vishay.com
2
Si9925DY
Vishay Siliconix
Specifications (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Guaranteed by design, not subject to production testing.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
a
Parameter
b
J
b
= 25_C Unless Otherwise Noted)
b
b
b
Symbol
V
r
r
I
DS(on)
t
t
I
GS(th)
I
I
V
D(on)
Q
Q
d(off)
GSS
d(on)
DSS
DSS
g
Q
R
t
SD
t
t
rr
fs
gs
gd
r
f
g
g
V
V
I
D
DS
DS
^ 1 A, V
I
= 6 V, V
F
V
= 16 V, V
V
V
V
V
V
V
V
DS
= 5.0 A, di/dt = 100 A/ms
DS
GS
V
I
Test Condition
GS
GS
V
V
DS
DS
S
DS
GS
DD
DD
= 0 V, V
=5.0 A, V
= V
= 3.0 V, I
= 10 V, I
= 10 V, V
= 7.2 V, I
= 4.5 V, I
w 5 V, V
= 2.5 V, I
GEN
= 6 V, R
= 6 V, R
GS
GS
GS
= 4.5 V, I
, I
= 4.5 V, R
GS
= 0 V, T
D
D
GS
GS
D
D
GS
= 250 mA
D
L
L
D
= "12 V
= 5.0 A
= 5.0 A
= 5.0 A
= 6 W
= 6 W
= 3.9 A
= 0 V
= 1 A
= 5 V
= 0 V
D
J
G
= 70_C
= 5.0 A
= 6 W
0.025
Min
0.8
30
1
Typ
0.038
0.041
0.050
0.062
0.81
2.6
14
14
13
35
60
9
2
9
S-03950—Rev. N, 26-May-03
a
Document Number: 70145
"100
Max
0.045
0.05
0.06
0.08
150
1.2
2.9
20
40
30
60
30
1
5
Unit
nC
nA
mA
mA
ns
W
W
W
V
A
S
V