BP 104 SR OSRAM Opto Semiconductors Inc, BP 104 SR Datasheet

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BP 104 SR

Manufacturer Part Number
BP 104 SR
Description
Manufacturer
OSRAM Opto Semiconductors Inc
Type
Chipr
Datasheet

Specifications of BP 104 SR

Photodiode Type
PIN
Polarity
Forward
Reverse Breakdown Voltage
20V
Forward Voltage
1.3V
Responsivity
0.62A/W
Peak Wavelength
850nm
Dark Current (max)
30nA
Power Dissipation
150mW
Light Current
55uA
Rise Time
20ns
Fall Time
20ns
Photodiode Material
Si
Operating Temp Range
-40C to 100C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
2
Package Type
SMT
Lead Free Status / Rohs Status
Compliant
Silizium-PIN-Fotodiode
Silicon PIN Photodiode
Lead (Pb) Free Product - RoHS Compliant
BP 104 S, BP 104 SR
Wesentliche Merkmale
• Speziell geeignet für Anwendungen im Bereich
• Kurze Schaltzeit (typ. 20 ns)
• Geeignet für Reflow-Löten
• SMT-fähig
Anwendungen
• Lichtschranken
• IR-Fernsteuerungen
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type
BP 104 S
BP 104 SR
2007-04-18
von 400 nm bis 1100 nm
Bestellnummer
Ordering Code
Q65110A2626
Q65110A4262
BP 104 S
Fotostrom, E
Photocurrent
Ip (
55 (≥40)
55 (≥40)
µ
A)
1
Features
• Especially suitable for applications from
• Short switching time (typ. 20 ns)
• Suitable for reflow soldering
• Suitable for SMT
Applications
• Photointerrupters
• IR remote controls
• Industrial electronics
• For control and drive circuits
v
=1000 lx, standard light A, V
400 nm to 1100 nm
BP 104 SR
R
= 5 V

Related parts for BP 104 SR

BP 104 SR Summary of contents

Page 1

... Silizium-PIN-Fotodiode Silicon PIN Photodiode Lead (Pb) Free Product - RoHS Compliant BP 104 S, BP 104 SR Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm • Kurze Schaltzeit (typ. 20 ns) • Geeignet für Reflow-Löten • SMT-fähig Anwendungen • Lichtschranken • IR-Fernsteuerungen • ...

Page 2

... T = 2856 K) Symbol Symbol I P λ S max λ A × × ϕ λ η 104 S, BP 104 SR Wert Einheit Value Unit ° C – 40 … + 100 20 V 150 mW Wert Einheit Value Unit 55 (≥40) nA/lx 850 nm 400 … 1100 nm 2 4.84 mm 2.20 × 2.20 mm × mm ± ...

Page 3

... Rauschäquivalente Strahlungsleistung Noise equivalent power = 10 V, λ = 850 λ = 850 nm V Nachweisgrenze, R Detection limit 2007-04- 2856 2856 K) (cont’d) Symbol Symbol 800 µ NEP 104 S, BP 104 SR Wert Einheit Value Unit µ 1 – 2.6 mV/K 0.18 %/K 3.6 × 10 – ----------- - Hz 6.1 × × -------------------------- - W ...

Page 4

... Photocurrent Open-Circuit Voltage 3 10 µ A Ι Ι Capacitance MHz ϕ 1.0 0.8 0.6 0.4 0 100 4 BP 104 S, BP 104 Total Power Dissipation tot A OHF02283 4 10 160 tot 140 3 120 10 100 Dark Current OHF01778 3 10 Ι OHF01402 ...

Page 5

... Photosensitive area Cathode lead 2.20 (0.087) x 2.20 (0.087) GEOY6861 Chip position 1.1 (0.043) 0.9 (0.035) 6.7 (0.264) 6.2 (0.244) 4.5 (0.177) 4.3 (0.169) 1.6 (0.063) ±0.2 (0.008) Photosensitive area Cathode lead 2.20 (0.087) x 2.20 (0.087) GPLY7049 5 BP 104 S, BP 104 SR ...

Page 6

... J-STD-020C) (acc. to J-STD-020C) Maximum Solder Profile Recommended Solder Profile Minimum Solder Profile 120 s max 100 150 2 with the express written approval of OSRAM OS 104 S, BP 104 SR OHLA0687 +0 ˚C 260 ˚C -5 ˚C 245 ˚C ±5 ˚C +5 ˚C 235 ˚C -0 ˚ min 30 s max ...

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