GT28F160C3TA90 Intel, GT28F160C3TA90 Datasheet - Page 34

• Manufacturer Part Number: GT28F160C3TA90
• Description: Flash Mem Parallel 3V/3.3V 16M-Bit 1M x 16 90ns 48-Pin UBGA
• Manufacturer: Intel

Specifications of GT28F160C3TA90

• Package: 48UBGA
• Density: 16 Mb
• Architecture: Sectored
• Block Organization: Asymmetrical
• Location Of Boot Block: Top
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 8KByte x 8|64KByte x 31
• Support Of Common Flash Interface: Yes
• Timing Type: Asynchronous
• Operating Temperature: -40 to 85 °C
• Interface Type: Parallel

Intel
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Warning:
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Advanced+ Boot Block Flash Memory (C3)
Power Supply Decoupling
Flash memory power-switching characteristics require careful device decoupling. System
designers should consider the following three supply current issues:
Transient current magnitudes depend on the device outputs’ capacitive and inductive loading. Two-
line control and proper decoupling capacitor selection will suppress these transient voltage peaks.
Each flash device should have a 0.1 µF ceramic capacitor connected between each V
and between its V
be placed as close as possible to the package leads.
Thermal and DC Characteristics
Absolute Maximum Ratings
Stressing the device beyond the “Absolute Maximum Ratings” may cause permanent damage.
These are stress ratings only. Operation beyond the “Operating Conditions” is not recommended,
and extended exposure beyond the “Operating Conditions” may affect device reliability.
NOTICE: Specifications are subject to change without notice. Verify with your local Intel Sales office that you have
the latest datasheet before finalizing a design
Extended Operating Temperature
Storage Temperature
Voltage On Any Pin (except V
V
V
Output Short Circuit Current
NOTES:
•
•
•
1. Minimum DC voltage is –0.5 V on input/output pins. During transitions, this level may
2. Maximum DC voltage on V
3. V
4. Output shorted for no more than one second. No more than one output shorted at a time.
PP
CC
During Read
During Block Erase and Program
Temperature under Bias
undershoot to –2.0 V for periods <20 ns. Maximum DC voltage on input/output pins is V
+0.5 V which, during transitions, may overshoot to V
done for a maximum of 1000 cycles on the main blocks and 2500 cycles on the parameter
blocks during program/erase. V
Standby current levels (I
Read current levels (I
Transient peaks produced by falling and rising edges of CE#.
Voltage (for Block Erase and Program) with Respect to GND
and V
PP
Program voltage is normally 1.65 V–3.6 V. Connection to a 11.4 V–12.6 V supply can be
CCQ
Supply Voltage with Respect to GND
PP
and VSS. These high- frequency, inherently low-inductance capacitors should
Parameter
CCR
CC
PP
CCS
)
and V
may overshoot to +14.0 V for periods <20 ns.
PP
)
may be connected to 12 V for a total of 80 hours maximum.
PP
.
) with Respect to GND
CC
+2.0 V for periods <20 ns.
–40 °C to +85 °C
–40 °C to +85 °C
–40 °C to +85 °C
–65 °C to +125 °C
–0.5 V to +3.7 V
–0.5 V to +13.5 V
–0.2 V to +3.6 V
100 mA
Maximum Rating
CC
CC
Datasheet
and GND,
Notes
1,2,3
1
4