BF5030E6327XT Infineon Technologies, BF5030E6327XT Datasheet

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BF5030E6327XT

Manufacturer Part Number
BF5030E6327XT
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BF5030E6327XT

Application
VHF/UHF
Channel Type
N
Channel Mode
Depletion
Continuous Drain Current
0.025A
Drain Source Voltage (max)
8V
Power Gain (typ)@vds
34@3V/34@5VdB
Noise Figure (max)
1.3(Typ)dB
Package Type
SOT-143
Pin Count
3 +Tab
Forward Transconductance (typ)
0.041S
Input Capacitance (typ)@vds
2.7@3V@Gate 1/2.8@5V@Gate 1pF
Output Capacitance (typ)@vds
1.6@3V/1.5@5VpF
Operating Temp Range
-55C to 150C
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
200mW
Lead Free Status / Rohs Status
Supplier Unconfirmed
Silicon N-Channel MOSFET Tetrode
• Designed for input stages of UHF- and
• Supporting 5 V operations and
• Integrated ESD gate protection diodes
• Very low noise figure
• High gain, high forward transadmittance
• Very good cross modulation at gain reduction
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BF5030
BF5030R
BF5030W
VHF-tuners with AGC function
power saving 3 V operations
Package
SOT143
SOT143R
SOT343
1=S
1=D
1=D
2=D
2=S
2=S
1
Pin Configuration
AGC
HF
Input
3=G2
3=G1
3=G1
R
G1
4=G1
4=G2
4=G2
V
GG
G2
G1
-
-
-
4
3
GND
-
-
-
Drain
BF5030...
2009-05-05
1
Marking
KXs
KXs
KXs
HF Output
+ DC
2
EHA07461

Related parts for BF5030E6327XT

BF5030E6327XT Summary of contents

Page 1

Silicon N-Channel MOSFET Tetrode • Designed for input stages of UHF- and VHF-tuners with AGC function • Supporting 5 V operations and power saving 3 V operations • Integrated ESD gate protection diodes • Very low noise figure • High ...

Page 2

Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1/ gate 2-source voltage Total power dissipation ≤ 94 °C, BF5030W T S ≤ 76 °C, BF5030, BF5030R T S Storage temperature Channel temperature Thermal Resistance ...

Page 3

Electrical Characteristics at T Parameter DC Characteristics Drain-source breakdown voltage µ G1S G2S Gate1-source breakdown voltage + mA G1S G2S Gate2-source breakdown voltage +I ...

Page 4

Electrical Characteristics at T Parameter AC Characteristics - (verified by random sampling) Forward transconductance mA G2S mA G2S Gate1 input ...

Page 5

Total power dissipation P BF5030W 220 mA 180 160 140 120 100 ƒ(I Drain current  ...

Page 6

Gate 1 current I G1 G1S V = Parameter G2S  … 200 µA 100 0.5 1 1.5 = ƒ(V Drain current I D G1S ...

Page 7

Drain current Parameter in kΩ G1  … ...

Page 8

Power gain G ps G2S  G2S … G2S ...

Page 9

Crossmodulation test circuit R GEN 50Ω AGC DS 4n7 R1 10kΩ 2.2 uH 4n7 4n7 50 Ω RG1 BF5030... 4n7 RL 50Ω Semibiased 2009-05-05 ...

Page 10

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Package SOT143 2.9 ±0 0.2 +0.1 0.8 -0.05 +0.1 0.4 -0.05 0.25 B ...

Page 11

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Package SOT143R 2.9 ±0 0.2 +0.1 0.8 -0.05 +0.1 0.4 -0.05 1.7 0.2 ...

Page 12

Package Outline +0.1 0.3 -0.05 4x 0.1 Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT343 2 ±0.2 0.1 MAX. 1.3 0 0.15 1 ...

Page 13

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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