LMV1015UR-15/NOPB National Semiconductor, LMV1015UR-15/NOPB Datasheet

IC AMP AUDIO MONO AB MIC 4USMD

LMV1015UR-15/NOPB

Manufacturer Part Number
LMV1015UR-15/NOPB
Description
IC AMP AUDIO MONO AB MIC 4USMD
Manufacturer
National Semiconductor
Type
Class ABr
Datasheet

Specifications of LMV1015UR-15/NOPB

Output Type
1-Channel (Mono)
Voltage - Supply
2 V ~ 5 V
Features
Microphone
Mounting Type
Surface Mount
Package / Case
4-MicroSMD
Operational Class
Class-AB
Audio Amplifier Output Configuration
1-Channel Mono
Audio Amplifier Function
Microphone
Total Harmonic Distortion
0.13@2200Ohm%
Single Supply Voltage (typ)
3V
Dual Supply Voltage (typ)
Not RequiredV
Supply Current (max)
0.3@5VmA
Power Supply Requirement
Single
Rail/rail I/o Type
No
Single Supply Voltage (min)
2V
Single Supply Voltage (max)
5V
Dual Supply Voltage (min)
Not RequiredV
Dual Supply Voltage (max)
Not RequiredV
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
4
Package Type
uSMD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Max Output Power X Channels @ Load
-
Lead Free Status / Rohs Status
Compliant
Other names
LMV1015UR-15
LMV1015UR-15TR
© 2005 National Semiconductor Corporation
LMV1015 Analog Series:
Built-in Gain IC’s for High Sensitivity 2-Wire
Microphones
General Description
The LMV1015 is an audio amplifier series for small form
factor electret microphones. This 2-wire portfolio is designed
to replace the JFET amplifier. The LMV1015 series is ideally
suited for applications requiring high signal integrity in the
presence of ambient or RF noise, such as in cellular com-
munications. The LMV1015 audio amplifiers are guaranteed
to operate over a 2.2V to 5.0V supply voltage range with
fixed gains of 15.6 dB and 23.8 dB. The devices offer excel-
lent THD, gain accuracy and temperature stability as com-
pared to a JFET microphone.
The LMV1015 series enables a two-pin electret microphone
solution, which provides direct pin-to-pin compatibility with
the existing older JFET market.
National Semiconductors built-in gain families are offered in
extremely thin space saving 4-bump micro SMD packages
(0.3 mm maximum). The LMV1015XR is designed for 1.0
mm ECM canisters and thicker. These extremely miniature
packages have the Large Dome Bump (LDB) technology.
This micro SMD technology is designed for microphone
PCBs requiring 1 kg adhesion criteria.
Schematic Diagram
DS201289
20128901
Features
(Typical LMV1015-15, 2.2V supply, R
V
n Supply voltage
n Supply current
n Signal to noise ratio (A-weighted)
n Output voltage noise (A-weighted)
n Total harmonic distortion
n Voltage gain
n Temperature range
n Large Dome 4-Bump micro SMD package with improved
Applications
n Cellular phones
n Headsets
n Mobile communications
n Automotive accessories
n PDAs
n Accessory microphone products
Built-In Gain Electret Microphone
IN
adhesion technology.
— LMV1015-15
— LMV1015-25
= 18 mV
PP
, unless otherwise specified)
L
= 2.2 kΩ, C = 2.2 µF,
−40˚C to 85˚C
www.national.com
May 2005
<
−89 dBV
20128902
15.6 dB
23.8 dB
2V - 5V
180 µA
0.09%
60 dB

Related parts for LMV1015UR-15/NOPB

LMV1015UR-15/NOPB Summary of contents

Page 1

... The LMV1015 series enables a two-pin electret microphone solution, which provides direct pin-to-pin compatibility with the existing older JFET market. National Semiconductors built-in gain families are offered in extremely thin space saving 4-bump micro SMD packages (0.3 mm maximum). The LMV1015XR is designed for 1.0 mm ECM canisters and thicker ...

Page 2

... Absolute Maximum Ratings If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. ESD Tolerance (Note 2) Human Body Model Machine Model Supply Voltage V - GND DD Storage Temperature Range 2.2V Electrical Characteristics Unless otherwise specified, all limits guaranteed for T Boldface limits apply at the temperature extremes ...

Page 3

Electrical Characteristics Unless otherwise specified, all limits guaranteed for T Boldface limits apply at the temperature extremes. Symbol Parameter SNR Signal to Noise Ratio V Max Input Signal IN V Output Voltage OUT f Lower −3dB Roll Off Frequency ...

Page 4

... Ultra-Thin LMV1015UR-15 micro SMD LMV1015URX-15 (0.4 mm max height) LMV1015UR-25 lead free only LMV1015URX-25 Note: All packages are supplied with large dome bump technology for 1kg adhesion criteria. www.national.com Large Dome 4-Bump micro SMD 20128903 Top View Package Marking Transport Media ...

Page 5

Typical Performance Characteristics C = 2.2 µF, single supply 25˚C A Supply Current vs. Supply Voltage (LMV1015-15) Gain and Phase vs. Frequency (LMV1015-15) Total Harmonic Distortion vs. Frequency (LMV1015-15) Unless otherwise specified, V Supply Current vs. Supply Voltage ...

Page 6

Typical Performance Characteristics C = 2.2 µF, single supply 25˚C (Continued) A Total Harmonic Distortion vs. Input Voltage (LMV1015-15) Output Noise vs. Frequency (LMV1015-15) www.national.com Unless otherwise specified, V Total Harmonic Distortion vs. Input Voltage 20128907 Output Noise ...

Page 7

Application Section HIGH GAIN The LMV1015 series provides outstanding gain versus the JFET and still maintains the same ease of implementation, with improved gain, linearity and temperature stability. A high gain eliminates the need for extra external components. BUILT IN ...

Page 8

Application Section (Continued) SPL needs to be converted to the absolute sound pressure in dBPa. This is the sound pressure level in decibels referred to 1 Pascal (Pa). The conversion is given by: dBPa = dB SPL + 20*log 20 ...

Page 9

Application Section (Continued) FIGURE 6. RF Noise Reduction 9 20128908 www.national.com ...

Page 10

... REFERENCE JEDEC REGISTRATION MO-211. VARIATION CA. 4-Bump Extreme Thin micro SMD with Large Dome Bump Technology NOTE: UNLESS OTHERWISE SPECIFIED. 1. FOR SOLDER BUMP COMPOSITION, SEE "SOLDER INFORMATION" IN THE PACKAGING SECTION OF THE NATIONAL SEMICONDUCTOR WEB PAGE (www.national.com). 2. RECOMMEND NON-SOLDER MASK DEFINED LANDING PAD. ...

Page 11

... BANNED SUBSTANCE COMPLIANCE National Semiconductor manufactures products and uses packing materials that meet the provisions of the Customer Products Stewardship Specification (CSP-9-111C2) and the Banned Substances and Materials of Interest Specification (CSP-9-111S2) and contain no ‘‘Banned Substances’’ as defined in CSP-9-111S2. ...

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