BG3130R Infineon Technologies AG, BG3130R Datasheet
BG3130R
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BG3130R Summary of contents
Page 1
... Improved cross modulation at gain reduction BG3130 BG3130R ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution! Type Package BG3130 SOT363 BG3130R SOT363 180° rotated tape loading orientation available Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current ...
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Electrical Characteristics Parameter DC Characteristics Drain-source breakdown voltage µ G1S G2S Gate1-source breakdown voltage + mA G1S G2S Gate2-source breakdown voltage + ...
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Electrical Characteristics Parameter AC Characteristics Forward transconductance Gate1 input capacitance MHz Output capacitance MHz Power gain f = 800 MHz MHz Noise figure f = 800 ...
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Total power dissipation P amp amp. B 300 mW 200 150 100 Output characteristics I D amp amp ...
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Gate 1 forward transconductance 5V G2S amp amp 2. Drain current ...
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Crossmodulation V = (AGC) unw 120 dBµV 100 Cossmodulation test circuit R GEN 50 Ohm AGC V AGC R1 2.2 µH 10 ...