CY7C1019BV33-15ZC Cypress Semiconductor Corporation., CY7C1019BV33-15ZC Datasheet

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CY7C1019BV33-15ZC

Manufacturer Part Number
CY7C1019BV33-15ZC
Description
128K x 8 static RAM, 15ns
Manufacturer
Cypress Semiconductor Corporation.
Datasheet
Cypress Semiconductor Corporation
Document #: 38-05131 Rev. *D
Features
Functional Description
The CY7C1018CV33 is a high-performance CMOS static
RAM organized as 131,072 words by 8 bits. Easy memory
expansion is provided by an active LOW Chip Enable (CE), an
active LOW Output Enable (OE), and tri-state drivers. This
Note:
1.
• Pin- and function-compatible with CY7C1018BV33
• High speed
• CMOS for optimum speed/power
• Center power/ground pinout
• Data retention at 2.0V
• Automatic power-down when deselected
• Easy memory expansion with CE and OE options
• Available in Pb-free and non Pb-free 300-mil-wide
Logic Block Diagram
WE
CE
OE
32-pin SOJ
— t
For guidelines on SRAM system designs, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com.
A
A
A
A
A
A
A
A
A
AA
0
1
2
3
4
5
6
7
8
= 10 ns
INPUT BUFFER
128K x 8
DECODER
ARRAY
COLUMN
[1]
POWER
DOWN
198 Champion Court
device has an automatic power-down feature that significantly
reduces power consumption when deselected.
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. Data on the eight I/O
pins (I/O
specified on the address pins (A
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing Write
Enable (WE) HIGH. Under these conditions, the contents of
the memory location specified by the address pins will appear
on the I/O pins.
The eight input/output pins (I/O
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), or during a write
operation (CE LOW, and WE LOW).
The CY7C1018CV33 is available in a standard 300-mil-wide
SOJ.
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
0
1
2
3
4
5
6
7
0
San Jose
through I/O
V
I/O
I/O
V
I/O
I/O
WE
,
128K x 8 Static RAM
CE
CC
A
A
A
A
A
A
A
A
SS
CA 95134-1709
7
0
1
2
0
1
2
3
4
5
6
3
7
Pin Configurations
) is then written into the location
13
14
15
16
1
2
3
4
5
6
7
8
9
10
11
12
Top View
0
SOJ
0
through I/O
Revised August 3, 2006
through A
CY7C1018CV33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
7
A
A
A
A
OE
I/O
I/O
V
V
I/O
I/O
A
A
A
A
A
) are placed in a
).
SS
CC
16
15
14
13
12
11
10
9
8
408-943-2600
7
6
5
4
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CY7C1019BV33-15ZC Summary of contents

Page 1

Features • Pin- and function-compatible with CY7C1018BV33 • High speed — • CMOS for optimum speed/power • Center power/ground pinout • Data retention at 2.0V • Automatic power-down when deselected • Easy memory expansion with ...

Page 2

Selection Guide Maximum Access Time Maximum Operating Current Comm’l Ind’l Maximum Standby Current Maximum Ratings (Above which the useful life may be impaired. For user guide- lines, not tested.) Storage Temperature ................................. –65°C to +150°C Ambient Temperature with Power Applied............................................. ...

Page 3

AC Test Loads and Waveforms R 317Ω 3.3V OUTPUT 351Ω (a) High-Z characteristics: R 317Ω 3.3V OUTPUT 351Ω (c) Switching Characteristics Over the Operating Range Parameter Description Read Cycle t Read Cycle Time RC ...

Page 4

Switching Waveforms [11, 12] Read Cycle No. 1 ADDRESS DATA OUT PREVIOUS DATA VALID [12, 13] Read Cycle No. 2 (OE Controlled) ADDRESS CE t ACE OE t LZOE HIGH IMPEDANCE DATA OUT t LZCE SUPPLY ...

Page 5

Switching Waveforms (continued) Write Cycle No. 2 (WE Controlled, OE HIGH During Write) ADDRESS DATA I/O NOTE 16 t HZOE Write Cycle No. 3 (WE Controlled, OE LOW) ADDRESS NOTE 16 ...

Page 6

Ordering Information Speed (ns) Ordering Code 10 CY7C1018CV33-10VC 12 CY7C1018CV33-12VC CY7C1018CV33-12VXI 15 CY7C1018CV33-15VXC Package Diagram All product and company names mentioned in this document are the trademarks of their respective holders. Document #: 38-05131 Rev. *D © Cypress Semiconductor Corporation, ...

Page 7

Document History Page Document Title: CY7C1018CV33 128K x 8 Static RAM Document Number: 38-05131 Issue REV. ECN NO. Date ** 109426 12/14/01 *A 113432 04/10/02 *B 115046 05/30/02 *C 116476 09/16/02 *D 493543 See ECN Document #: 38-05131 Rev. *D ...

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