MTDF1N02HDR2 Freescale Semiconductor, Inc, MTDF1N02HDR2 Datasheet

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MTDF1N02HDR2

Manufacturer Part Number
MTDF1N02HDR2
Description
Manufacturer
Freescale Semiconductor, Inc
Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer's
Medium Power Surface Mount Products
TMOS Dual N-Channel
Field Effect Transistor
which utilize Motorola’s High Cell Density HDTMOS process to
achieve lowest possible on–resistance per silicon area. They are
capable of withstanding high energy in the avalanche and commuta-
tion modes and the drain–to–source diode has a very low reverse
recovery time. Micro8
high speed switching applications where power efficiency is important.
Typical applications are dc–dc converters, and power management in
portable and battery powered products such as computers, printers,
cellular and cordless phones. They can also be used for low voltage
motor controls in mass storage products such as disk drives and tape
drives. The avalanche energy is specified to eliminate the guesswork
in designs where inductive loads are switched and offer additional
safety margin against unexpected voltage transients.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Micro8 is a registered trademark of International
Rectifier. Thermal Clad is a trademark of the Bergquist Company.
REV 5
Motorola TMOS Power MOSFET Transistor Device Data
Micro8
Motorola, Inc. 1997
Miniature Micro8 Surface Mount Package — Saves Board
Space
Extremely Low Profile (<1.1 mm) for thin applications such as
PCMCIA cards
Ultra Low R DS(on) Provides Higher Efficiency and Extends Bat-
tery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
I DSS Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for Micro8 Package Provided
DEVICE MARKING
devices are an advanced series of power MOSFETs
BA
BA
devices are designed for use in low voltage,
Data Sheet
MTDF1N02HDR2
Device
Reel Size
ORDERING INFORMATION
13
G
12 mm embossed tape
D
Tape Width
S
MTDF1N02HD
Source1
Source2
Gate1
Gate2
R DS(on) = 0.120 OHM
CASE 846A–02, Style 2
Motorola Preferred Device
POWER MOSFET
1.7 AMPERES
DUAL TMOS
20 VOLTS
Order this document
Top View
Micro8
by MTDF1N02HD/D
1
2
3
4
4000 units
Quantity
8
7
6
5
Drain1
Drain1
Drain2
Drain2
1

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MTDF1N02HDR2 Summary of contents

Page 1

... BA BA MTDF1N02HDR2 Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. ...

Page 2

MTDF1N02HD MAXIMUM RATINGS ( unless otherwise noted) Rating Drain–to–Source Voltage Drain–to–Gate Voltage ( 1.0 MΩ) Gate–to–Source Voltage — Continuous 1 inch SQ. Thermal Resistance — Junction to Ambient FR–4 or G–10 PCB Total Power ...

Page 3

ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage ( Vdc 250 µAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc, V ...

Page 4

MTDF1N02HD TYPICAL ELECTRICAL CHARACTERISTICS 4 4.5 V 3.0 2.7 V 2.3 V 2.1 V 2.0 1 0.4 0.8 1 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 3. On–Region Characteristics 0.6 0.5 0.4 0.3 ...

Page 5

Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (∆t) are deter- mined by how fast the FET input capacitance can be charged by current from ...

Page 6

MTDF1N02HD 6.0 QT 5 2.0 1 1.0 2.0 3 TOTAL GATE CHARGE (nC) Figure 10. Gate–To–Source and Drain–To–Source Voltage versus Total Charge DRAIN–TO–SOURCE DIODE CHARACTERISTICS The ...

Page 7

The Forward Biased Safe Operating Area curve (Figure 14) defines the maximum simultaneous drain–to–source vol- tage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a ...

Page 8

MTDF1N02HD TYPICAL ELECTRICAL CHARACTERISTICS 1000 D = 0.5 100 0.2 0.1 0.05 10 0.02 0.01 1 SINGLE PULSE 0.1 1.0E–05 1.0E–04 1.0E–03 Figure 16. Diode Reverse Recovery Waveform 8 P (pk DUTY CYCLE ...

Page 9

INFORMATION FOR USING THE Micro8 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ensure ...

Page 10

MTDF1N02HD For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones and a figure for belt speed. Taken together, these control ...

Page 11

Micro8 Dimensions are shown in millimeters (inches) 2.05 (.080) 1.95 (.077) PIN 4.10 (.161) NUMBER 1 3.90 (.154) 12.30 11.70 (.484) (.461) FEED DIRECTION NOTES: 1. CONFORMS TO EIA–481–1. 2. CONTROLLING DIMENSION: MILLIMETER. 330.0 (13.20) MAX. NOTES: 1. CONFORMS TO ...

Page 12

MTDF1N02HD –A– K PIN SEATING –T– PLANE 0.038 (0.0015) Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for ...

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