MRF9130L Freescale Semiconductor, Inc, MRF9130L Datasheet

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MRF9130L

Manufacturer Part Number
MRF9130L
Description
Manufacturer
Freescale Semiconductor, Inc
Datasheet
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
frequencies from 921 to 960 MHz, the high gain and broadband performance
of these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
• Typical Performance for GSM Frequencies, 921 to 960 MHz, 28 Volts
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 945 MHz, 130 Watts CW
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Charge Device Model
D e s i g n e d f o r G S M a n d G S M E D G E b a s e s t a t i o n a p p l i c a t i o n s w i t h
Output Power
Derate above 25°C
Output Power @ P1dB — 135 Watts
Power Gain — 16.5 dB @ 130 Watts Output Power
Efficiency — 48% @ 130 Watts Output Power
C
= 25°C
Test Conditions
Characteristic
Rating
Symbol
Symbol
V
R
V
T
P
T
DSS
T
θJC
GS
stg
D
C
J
CASE 465A - 06, STYLE 1
CASE 465 - 06, STYLE 1
Document Number: MRF9130L
921 - 960 MHz, 130 W, 28 V
MRF9130LSR3
LATERAL N - CHANNEL
MRF9130LSR3
RF POWER MOSFETs
MRF9130LR3
MRF9130LR3
NI - 780S
MRF9130LR3 MRF9130LSR3
GSM/GSM EDGE
M2 (Minimum)
C7 (Minimum)
NI - 780
1 (Minimum)
- 65 to +200
- 0.5, +65
- 0.5, +15
Value
Value
Class
298
150
200
1.7
0.6
Rev. 4, 5/2006
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
W
1

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MRF9130L Summary of contents

Page 1

... Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Charge Device Model © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor Document Number: MRF9130L Rev. 4, 5/2006 MRF9130LR3 MRF9130LSR3 GSM/GSM EDGE 921 - 960 MHz, 130 LATERAL N - CHANNEL RF POWER MOSFETs ...

Page 2

... Vdc 130 1000 mA 921 and 960 MHz) DD out DQ Input Return Loss ( Vdc 130 1000 mA 921 and 960 MHz) DD out DQ 1. Part internally input matched. MRF9130LR3 MRF9130LSR3 2 = 25°C unless otherwise noted) C Symbol I DSS I DSS I GSS V GS(th) V GS(Q) ...

Page 3

... Microstrip 1.074″ x 1.068″ Microstrip 1.074″ x 0.980″ Microstrip 0.117″ x 1.933″ Microstrip 0.117″ x 0.605″ Microstrip Taconic TLX8, 0.030″, ε C19 C20 C21 C16 OUTPUT Z6 Z5 C22 C17 C18 MRF9130LR3 MRF9130LSR3 RF 3 ...

Page 4

... Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 921 - 960 MHz Test Circuit Component Layout MRF9130LR3 MRF9130LSR3 4 R3 C10 ...

Page 5

... Figure 7. Power Gain versus Output Power 0 −5 −10 −15 −20 −25 1000 = 1200 Vdc 940 MHz 10 100 P , OUTPUT POWER (WATTS) out Figure 5. Power Gain versus Output Power = 28 Vdc DD = 1000 100 P , OUTPUT POWER (WATTS) out MRF9130LR3 MRF9130LSR3 1000 1000 5 ...

Page 6

... MHz OUTPUT POWER (WATTS) AVG. out Figure 8. EVM and Efficiency versus Output Power Note: Curves on Figure 8 and 9 gathered on a GSM EDGE optimized text fixture. MRF9130LR3 MRF9130LSR3 6 TYPICAL CHARACTERISTICS − Vdc DD − 800 960 MHz − ...

Page 7

... Z Z source load MHz Ω 880 0.63 - j1.66 0.82 - j0.36 920 0.67 - j1.88 0.72 - j0.30 960 0.82 - j2.18 0.74 - j0.37 1000 0.86 - j2.56 0.69 - j0. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Device Input Under Test Matching Network Z Z source load Ω Output Matching Network MRF9130LR3 MRF9130LSR3 7 ...

Page 8

... MRF9130LR3 MRF9130LSR3 8 NOTES RF Device Data Freescale Semiconductor ...

Page 9

... RF Device Data Freescale Semiconductor NOTES MRF9130LR3 MRF9130LSR3 9 ...

Page 10

... MRF9130LR3 MRF9130LSR3 10 NOTES RF Device Data Freescale Semiconductor ...

Page 11

... M R 0.365 0.375 9.27 S 0.365 0.375 9.27 U −−− 0.040 −−− Z −−− 0.030 −−− aaa 0.005 REF 0.127 REF bbb 0.010 REF 0.254 REF F ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRF9130LR3 MRF9130LSR3 9.91 4.32 1.14 0.15 1.70 5.33 9.53 9.52 1.02 0.76 11 ...

Page 12

... Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF9130LR3 MRF9130LSR3 Document Number: MRF9130L Rev. 4, 5/2006 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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