CY7C1325-100AC Cypress Semiconductor Corporation., CY7C1325-100AC Datasheet

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CY7C1325-100AC

Manufacturer Part Number
CY7C1325-100AC
Description
256K x 18 Synchronous 3.3V Cache RAM
Manufacturer
Cypress Semiconductor Corporation.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1325-100AC
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Features
Selection Guide
Cypress Semiconductor Corporation
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum Standby Current (mA)
Intel and Pentium are registered trademarks of Intel Corporation.
• Supports 117-MHz microprocessor cache systems with
• 256K by 18 common I/O
• Fast clock-to-output times
• Two-bit wrap-around counter supporting either inter-
• Separate processor and controller address strobes pro-
• Synchronous self-timed write
• Asynchronous output enable
• I/Os capable of 2.5–3.3V operation
• JEDEC-standard pinout
• 100-pin TQFP packaging
• ZZ “sleep” mode
Logic Block Diagram
zero wait states
leaved or linear burst sequence
vides direct interface with the processor and external
cache controller
— 7.5 ns (117-MHz version)
BW
ADSP
ADSC
BW
A
CE
CE
CE
ADV
[17:0]
GW
BWE
CLK
0
OE
ZZ
1
1
2
3
18
(A
MODE
0
,A
1
3901 North First Street
) 2
16
CE
CE
D
CLR
D
D
CE
D
CLK
BYTEWRITE
REGISTERS
BYTEWRITE
REGISTERS
REGISTER
DQ[15:8]
COUNTER
REGISTER
CONTROL
ADDRESS
DQ[7:0]
ENABLE
SLEEP
BURST
7C1325-117
10.0
350
Q
Q
7.5
Q
Q
Q
Q
0
1
Functional Description
The CY7C1325 is a 3.3V, 256K by 18 synchronous cache
RAM designed to interface with high-speed microprocessors
with minimum glue logic. Maximum access delay from clock
rise is 7.5 ns (117-MHz version). A 2-bit on-chip counter cap-
tures the first address in a burst and increments the address
automatically for the rest of the burst access.
The CY7C1325 allows both an interleaved or linear burst se-
quences, selected by the MODE input pin. A HIGH selects an
interleaved burst sequence, while a LOW selects a linear burst
sequence. Burst accesses can be initiated with the Processor
Address Strobe (ADSP) or the Cache Controller Address
Strobe (ADSC) inputs. Address advancement is controlled by
the Address Advancement (ADV) input.
A synchronous self-timed write mechanism is provided to sim-
plify the write interface. A synchronous chip enable input and
an asynchronous output enable input provide easy control for
bank selection and output three-state control.
16
7C1325-100
San Jose
256K x 18 Synchronous
10.0
325
8.0
18
3.3V Cache RAM
7C1325-80
CA 95134
10.0
300
8.5
18
256K X 18
MEMORY
ARRAY
CY7C1325
CLK
7C1325-50
408-943-2600
REGISTERS
May 10, 2000
INPUT
11.0
10.0
250
18
DQ
DP
[15:0]
[1:0]

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CY7C1325-100AC Summary of contents

Page 1

... Intel and Pentium are registered trademarks of Intel Corporation. Cypress Semiconductor Corporation 256K x 18 Synchronous Functional Description The CY7C1325 is a 3.3V, 256K by 18 synchronous cache RAM designed to interface with high-speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 7.5 ns (117-MHz version). A 2-bit on-chip counter cap- tures the first address in a burst and increments the address automatically for the rest of the burst access ...

Page 2

... 100-Lead TQFP CY7C1325 CY7C1325 DDQ DDQ BYTE0 DDQ V SS ...

Page 3

... Bidirectional Data Parity lines. These behave identical to DQ These signals can be used as parity bits for bytes 0 and 1 respectively. Power supply inputs to the core of the device. Should be connected to 3.3V power supply. 3 CY7C1325 are also loaded into the burst [1:0] are also loaded into the burst [1:0] ...

Page 4

... Maximum access delay from the clock rise ( 7.5 ns (117-MHz device). CDV The CY7C1325 supports secondary cache in systems utilizing either a linear or interleaved burst sequence. The interleaved burst order supports Pentium and i486 processors. The linear burst sequence is suited for processors that utilize a linear burst sequence ...

Page 5

... The device must be deselected prior to entering the 01 “sleep” mode inactive for the duration of t LOW. 5 CY7C1325 Second Third Fourth Address Address Address ...

Page 6

... CY7C1325 ADV WE OE CLK L-H High L-H High L-H High L-H High L-H High ...

Page 7

... DD ZZ < 0.2V 2t CYC DC Input Voltage Current into Outputs (LOW)......................................... 20 mA Static Discharge Voltage .......................................... >2001V (per MIL-STD-883, Method 3015) Latch-Up Current .................................................... >200 mA Operating Range Ambient Range Temperature + 0.5V DD Com’l 0°C to +70°C 7 CY7C1325 BWE BWS BWS ...

Page 8

... Device Deselected – 0. 0.3V, IN DDQ inputs switching MAX, Max Device Deselected – 0. 0.3V inputs static Test Conditions T = 25° MHz 5. CY7C1325 7C1325 Min. Max. 2.4 2.0 0.4 0.7 2 0.3V 1 0.3V –0.3 0.8 –0.3 0 –30 5 –5 30 –5 5 –300 8 ...

Page 9

... OUTPUT 2. GND INCLUDING JIGAND [9] SCOPE 1325–3 (b) [10] -117 Min. Max. Min. 8.5 10 3.0 4.0 3.0 4.0 2.0 2.0 0.5 0.5 7.5 2.0 2.0 2.0 2.0 0.5 0.5 2.0 2.0 0.5 0.5 2.0 2.0 0.5 0.5 2.0 2.0 0.5 0.5 2.0 2.0 0.5 0.5 3 [11, 13] 3.5 [11, 13 3.5 /I =–2/2 mA (min). CLZ 9 CY7C1325 ALL INPUT PULSES 90% 90% 10% 10% 2.5 ns 2.5 ns 1325–4 -100 -90 -50 Max. Min. Max. Min. Max. Unit 11 20 4.5 4.5 4.5 4.5 2.0 2.0 0.5 0.5 8.0 8.5 11.0 2.0 2.0 2.0 2.0 0.5 0.5 2.0 2.0 0.5 0.5 2.0 2.0 0.5 0.5 2.0 2.0 0.5 0.5 2.0 2.0 0.5 0.5 3.5 3.5 3 3.5 3.5 3 3.5 3.5 3.5 ...

Page 10

... GW to define a write cycle (see Write Cycle Descriptions table). [1:0] 15. WDx stands for Write Data to Address X. Burst Write ADSP ignored with CE inactive masks ADSP UNDEFINED = DON’T CARE 10 CY7C1325 Pipelined Write Unselected ADSC initiated write WD3 Unselected with CE 2 High-Z 3a ...

Page 11

... RDx stands for Read Data from Address X. Burst Read ADSP ignored with Suspend Burst ADH masks ADSP DOH DON’T CARE = UNDEFINED 11 CY7C1325 Unselected Pipelined Read inactive 1 ADSC initiated read RD3 Unselected with CHZ ...

Page 12

... C t ADH t ADVH t WES ADSP ignored with CE HIGH 1 t EOHZ Q(B) D(C) (B+2) (B+1) (B+3) , and GW to define a write cycle (see Write Cycle Descriptions table). [1:0] and CE . All chip selects need to be active in order to select CY7C1325 ADH t CEH t CEH t WEH Q(D) (C+1) (C+2) (C+3) t DOH t CHZ ...

Page 13

... RAx stands for Read Address X, WAx stands for Write Address X, Dx stands for Data- stands for Data-out CYC ADH t CEH t WES ADSP ignored with CE HIGH 1 Q(D) and CE . All chip selects need to be active in order to select DON’T CARE = UNDEFINED 13 CY7C1325 WEH D (E) D (F) D (H) D (G) D(C) t DOH t CHZ ...

Page 14

... Timing Diagrams (continued) OE Switching Waveforms OE t EOHZ three-state I/Os t EOV t EOLZ 14 CY7C1325 ...

Page 15

... ADSP HIGH ADSC CE 1 LOW CE 2 HIGH I/Os Notes: 17. Device must be deselected when entering ZZ mode. See Cycle Descriptions Table for all possible signal conditions to deselect the device. 18. I/Os are in three-state when exiting ZZ sleep mode. t ZZS I (active CCZZ Three-state 15 CY7C1325 t ZZREC ...

Page 16

... Ordering Information Speed (MHz) Ordering Code 117 CY7C1325-117AC 100 CY7C1325-100AC 80 CY7C1325-80AC 50 CY7C1325-50AC Document #: 38-00652-B Package Diagram 100-Pin Thin Plastic Quad Flatpack ( 1.4 mm) A101 © Cypress Semiconductor Corporation, 2000. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product ...

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