MRF5S19130H Freescale Semiconductor, Inc, MRF5S19130H Datasheet
MRF5S19130H
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MRF5S19130H Summary of contents
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... Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor = 28 Volts ″ Nominal. μ Symbol Symbol Document Number: MRF5S19130H Rev. 2, 5/2006 MRF5S19130HR3 MRF5S19130HSR3 1930- 1990 MHz AVG CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 880 MRF5S19130HR3 ...
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... Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. MRF5S19130HR3 MRF5S19130HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS I ...
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... Microstrip Z9 0.080″ x 0.955″ Microstrip Z10, Z11 1.280″ x 0.046″ Microstrip Z12 0.053″ x 1.080″ Microstrip Figure 1. MRF5S19130HR3(SR3) Test Circuit Schematic Table 5. MRF5S19130HR3(SR3) Test Circuit Component Designations and Values Part B1 C2 C8, C13 ...
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... Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF5S19130HR3(SR3) Test Circuit Component Layout MRF5S19130HR3 MRF5S19130HSR3 4 ...
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... Figure 5. Third Order Intermodulation Distortion versus Output Power P3dB = 53.11 dBm (205.57 W) P1dB = 52.54 dBm (179. Vdc 1200 Pulsed CW, 8 μsec (on), 1 msec (off 1960 MHz INPUT POWER (dBm) in Input Power MRF5S19130HR3 MRF5S19130HSR3 100 200 Ideal Actual ...
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... OUTPUT POWER (WATTS) AVG. (N−CDMA) out Figure Carrier N - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power 0 −10 −20 −30 −40 −50 −60 −70 −80 −90 −100 MRF5S19130HR3 MRF5S19130HSR3 6 TYPICAL CHARACTERISTICS 9 10 −30 IM3 −35 η −40 ACPR − − ...
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... DD DQ out source load MHz Ω Ω 1930 2.57 - j9.1 1.48 - j1.8 1960 2.35 - j7.6 1.28 - j1.5 1990 3.86 - j9.2 1. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Device Input Under Test Matching Network Z Z source load Output Matching Network MRF5S19130HR3 MRF5S19130HSR3 7 ...
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... MRF5S19130HR3 MRF5S19130HSR3 8 NOTES RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor NOTES MRF5S19130HR3 MRF5S19130HSR3 9 ...
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... MRF5S19130HR3 MRF5S19130HSR3 10 NOTES RF Device Data Freescale Semiconductor ...
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... E 0.035 0.045 0.89 1.14 F 0.003 0.006 0.08 0.15 H 0.057 0.067 1.45 1.70 K 0.170 0.210 4.32 5.33 M 0.872 0.888 22.15 22.55 N 0.871 0.889 19.30 22.60 R 0.515 0.525 13.10 13.30 S 0.515 0.525 13.10 13.30 aaa 0.007 REF 0.178 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE F 3. SOURCE MRF5S19130HR3 MRF5S19130HSR3 11 ...
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... Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF5S19130HR3 MRF5S19130HSR3 Document Number: MRF5S19130H Rev. 2, 5/2006 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...