MRF5S21100H Freescale Semiconductor, Inc, MRF5S21100H Datasheet
MRF5S21100H
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MRF5S21100H Summary of contents
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... Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor = 28 Volts 1050 mA Operation DD μ″ Nominal. Document Number: MRF5S21100H Rev. 3, 5/2006 MRF5S21100HR3 MRF5S21100HSR3 2110 - 2170 MHz AVG CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 780 ...
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... MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. MRF5S21100HR3 MRF5S21100HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS I ...
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... Microstrip Z7 0.927″ x 0.048″ Microstrip Z8 0.620″ x 0.048″ Microstrip Z9 0.079″ x 1.136″ Microstrip Figure 1. MRF5S21100HR3(SR3) Test Circuit Schematic Table 5. MRF5S21100HR3(SR3) Test Circuit Component Designations and Values Part B1 Short RF Bead C1, C2 8.2 pF Chip Capacitors C3 5.6 pF Chip Capacitor C4 0.1 μ ...
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... Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF5S21100HR3(SR3) Test Circuit Component Layout MRF5S21100HR3 MRF5S21100HSR3 4 ...
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... DQ 1250 mA 1050 mA 850 mA 650 mA 10 100 P , OUTPUT POWER (WATTS) PEP out versus Output Power Ideal P3dB = 51.88 dBm (154. Vdc 1050 Pulsed CW, 8 μsec(on), 1msec(off 2140 MHz INPUT POWER (dBm) in Input Power MRF5S21100HR3 MRF5S21100HSR3 Actual ...
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... Bandwidth @ ±5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 0.001 8 0.01% Probability on CCDF 0.0001 PEAK−TO−AVERAGE (dB) Figure 10. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single Carrier Test Signal MRF5S21100HR3 MRF5S21100HSR3 6 TYPICAL CHARACTERISTICS 9 10 −15 η −20 D −25 8 IM3 10 − ...
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... MHz Ω Ω 2100 3.4 - j7.2 1.2 - j2.1 2120 3.4 - j6.5 1.4 - j2.3 2160 4.9 - j7.0 2.2 - j3.0 2200 3.4 - j8.6 1 Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Device Input Matching Under Test Network Z Z source load f = 2200 MHz Output Matching Network MRF5S21100HR3 MRF5S21100HSR3 7 ...
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... MRF5S21100HR3 MRF5S21100HSR3 8 NOTES RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor NOTES MRF5S21100HR3 MRF5S21100HSR3 9 ...
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... MRF5S21100HR3 MRF5S21100HSR3 10 NOTES RF Device Data Freescale Semiconductor ...
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... S (INSULATOR) Z −−− 0.030 −−− aaa 0.005 REF 0.127 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE F 5. SOURCE MRF5S21100HR3 MRF5S21100HSR3 MAX 34.16 9.91 4.32 12.83 1.14 0.15 1.70 5.33 19.96 20.00 3.51 9.53 9.52 MAX 20.70 9.91 4.32 12.83 1.14 0.15 1.70 5.33 20.02 20.02 9 ...
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... Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF5S21100HR3 MRF5S21100HSR3 Document Number: MRF5S21100H Rev. 3, 5/2006 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...