MRF6P23190H

Manufacturer Part NumberMRF6P23190H
DescriptionMRF6P23190HRF Power Field Effect Transistor
ManufacturerFreescale Semiconductor, Inc
MRF6P23190H datasheet
 


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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for 802.16 WiBro and dual mode applications with frequencies
from 2300 to 2400 MHz. Suitable for Class AB feedforward and predistortion
systems.
• Typical 2 - Carrier W - CDMA Performance: V
P
= 40 Watts Avg., Full Frequency Band, Channel Bandwidth =
out
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 14 dB
Drain Efficiency — 23.5%
IM3 @ 10 MHz Offset — - 37.5 dBc @ 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 41 dBc @ 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2340 MHz, 190 Watts CW
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• Low Gold Plating Thickness on Leads, 40
• Pb - Free and RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
= 25°C
C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 100°C, 160 W CW
Case Temperature 83°C, 40 W CW
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
 Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
= 28 Volts, I
= 1900 mA,
DD
DQ
Operation
DD
″ Nominal.
µ
Document Number: MRF6P23190H
Rev. 0, 10/2005
MRF6P23190HR6
2400 MHz, 40 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 375D - 05, STYLE 1
NI - 1230
Symbol
Value
Unit
V
- 0.5, +68
Vdc
DSS
V
- 0.5, +12
Vdc
GS
P
795
W
D
4.5
W/°C
T
- 65 to +150
°C
stg
T
200
°C
J
(1,2)
Symbol
Value
Unit
R
°C/W
θJC
0.22
0.24
MRF6P23190HR6
1

MRF6P23190H Summary of contents