MRF6P23190H Freescale Semiconductor, Inc, MRF6P23190H Datasheet

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MRF6P23190H

Manufacturer Part Number
MRF6P23190H
Description
MRF6P23190HRF Power Field Effect Transistor
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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 Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
from 2300 to 2400 MHz. Suitable for Class AB feedforward and predistortion
systems.
• Typical 2 - Carrier W - CDMA Performance: V
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2340 MHz, 190 Watts CW
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
• Low Gold Plating Thickness on Leads, 40
• Pb - Free and RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Freescale Semiconductor
Technical Data
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for 802.16 WiBro and dual mode applications with frequencies
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
P
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Output Power
Applications
Derate above 25°C
Case Temperature 100°C, 160 W CW
Case Temperature 83°C, 40 W CW
out
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Power Gain — 14 dB
Drain Efficiency — 23.5%
IM3 @ 10 MHz Offset — - 37.5 dBc @ 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 41 dBc @ 3.84 MHz Channel Bandwidth
the MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
= 40 Watts Avg., Full Frequency Band, Channel Bandwidth =
C
= 25°C
Characteristic
Rating
DD
Operation
µ
″ Nominal.
DD
= 28 Volts, I
DQ
= 1900 mA,
Symbol
Symbol
V
R
V
T
P
DSS
T
θJC
GS
stg
D
J
Document Number: MRF6P23190H
MRF6P23190HR6
2400 MHz, 40 W AVG., 28 V
CASE 375D - 05, STYLE 1
LATERAL N - CHANNEL
RF POWER MOSFET
- 65 to +150
Value
2 x W - CDMA
- 0.5, +68
- 0.5, +12
Value
NI - 1230
0.22
0.24
795
200
4.5
(1,2)
MRF6P23190HR6
Rev. 0, 10/2005
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
W
1

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MRF6P23190H Summary of contents

Page 1

... Freescale Semiconductor, Inc., 2005. All rights reserved. RF Device Data Freescale Semiconductor = 28 Volts 1900 mA Operation DD ″ Nominal. µ Document Number: MRF6P23190H Rev. 0, 10/2005 MRF6P23190HR6 2400 MHz AVG CDMA LATERAL N - CHANNEL RF POWER MOSFET CASE 375D - 05, STYLE 1230 Symbol Value ...

Page 2

... Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Each side of device measured separately. 2. Part internally matched both on input and output. 3. Measurement made with device in push - pull configuration. MRF6P23190HR6 2 = 25°C unless otherwise noted) C Symbol I DSS I DSS ...

Page 3

... Microstrip Z13, Z14 0.861″ x 0.050″ Microstrip Z15, Z16 0.187″ x 0.782″ Microstrip Figure 1. MRF6P23190HR6 Test Circuit Schematic Table 5. MRF6P23190HR6 Test Circuit Component Designations and Values Part B1, B2, B3, B4 Ferrite Beads (0805) C1, C2, C3, C4 5.1 pF 100B Chip Capacitors C5, C6, C7 ...

Page 4

... C12 C11 C10* C9 MRF6P23190H Rev. 3 C16 C15 R2 *Stacked. Figure 2. MRF6P23190HR6 Test Circuit Component Layout MRF6P23190HR6 C13* C14* C20 C21 C17 C18 C19 C27 C3 C4 C22 C23 C24 C25 C26 C28 RF Device Data Freescale Semiconductor ...

Page 5

... Watts Avg. out = 28 Vdc 2345 MHz 2355 MHz 2850 mA = 950 mA DQ 1900 mA 2375 mA 1425 100 P , OUTPUT POWER (WATTS) PEP out versus Output Power MRF6P23190HR6 5 ...

Page 6

... C 15 25_C 14 85_C 13 η OUTPUT POWER (WATTS) CW out Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6P23190HR6 6 TYPICAL CHARACTERISTICS P1dB = 54.5 dBm (283. 100 Figure 8. Pulse CW Output Power versus Vdc 1900 mA ...

Page 7

... CDMA TEST SIGNAL +20 +30 0 −10 −20 −30 −40 −50 −60 −IM3 @ 3.84 MHz BW −70 −80 −25 − 200 210 2 3.84 MHz Channel BW −ACPR @ +ACPR @ 3.84 MHz BW 3.84 MHz BW +IM3 @ 3.84 MHz BW −15 −10 − FREQUENCY (MHz) Figure 14. 2-Carrier W-CDMA Spectrum MRF6P23190HR6 ...

Page 8

... Input Matching Network Figure 15. Series Equivalent Source and Load Impedance MRF6P23190HR6 2400 MHz Z Z source f = 2300 MHz 2400 MHz load f = 2300 MHz Vdc 1900 mA Avg out source load MHz Ω Ω 2300 9.31 - j12.12 7.89 - j32.78 2310 9 ...

Page 9

... RF Device Data Freescale Semiconductor NOTES MRF6P23190HR6 9 ...

Page 10

... MRF6P23190HR6 10 NOTES RF Device Data Freescale Semiconductor ...

Page 11

... BSC 35.56 BSC H 0.082 0.090 2.08 2.29 K 0.117 0.137 2.97 3.48 L 0.540 BSC 13.72 BSC M 1.219 1.241 30.96 31.52 N 1.218 1.242 30.94 31. 0.120 0.130 3.05 3.30 R 0.355 0.365 9.01 9.27 S 0.365 0.375 9.27 9.53 aaa 0.013 REF 0.33 REF bbb 0.010 REF 0.25 REF ccc 0.020 REF 0.51 REF STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. GATE 5. SOURCE MRF6P23190HR6 11 ...

Page 12

... Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF6P23190HR6 Document Number: MRF6P23190H Rev. 0, 10/2005 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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