APT5010JVRU2 Advanced Power Technology, APT5010JVRU2 Datasheet - Page 7

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APT5010JVRU2

Manufacturer Part Number
APT5010JVRU2
Description
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Manufacturer
Advanced Power Technology
Datasheet
APT5010JVRU2
ISOTOP
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
1
4
5
6
2
3
+15v
-15v
®
is a Registered Trademark of SGS Thomson.
0v
I
di
I
t rr - Reverse Recovery Time Measured from Point of I
Q rr - Area Under the Curve Defined by I
diM/dt - Maximum Rate of Current Change During the Trailing Portion of t rr.
F
RRM
F
- Forward Conduction Current
/dt - Current Slew Rate, Rate of Forward
Extrapolated Through Zero Defined by 0.75 and 0.50 I
Current Falling Through Zero to a Tangent Line
- Peak Reverse Recovery Current.
r = 4.0 (.157)
Current Change Through Zero Crossing.
(2 places)
31.5 (1.240)
31.7 (1.248)
14.9 (.587)
15.1 (.594)
Figure 22, Diode Reverse Recovery Test Circuit and Waveforms
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
Figure 23, Diode Reverse Recovery Waveform and Definitions
7.8 (.307)
8.2 (.322)
SOT-227 (ISOTOP
Dimensions in Millimeters and (Inches)
RRM
5,256,583
di
F
and t rr .
/dt Adjust
5,045,903
4,748,103
3.3 (.129)
3.6 (.143)
{
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
F
6
®
) Package Outline
Cathode
Zero
diM/dt
Source
RRM
30 H
5,089,434
5,283,202
.
1
}
V r
5,182,234
5,231,474
1.95 (.077)
2.14 (.084)
TRANSFORMER
PEARSON 411
CURRENT
2
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
0.75 (.030)
0.85 (.033)
5,019,522
5,434,095
Drain
Gate
D.U.T.
Hex Nut M4
(4 places)
Changed 2/10/99
12.6 (.496)
12.8 (.504)
3
5,262,336
5,528,058
Q rr = 1 / 2
"UL Recognized" File No. E145592
4
5
0.75 I RRM
25.2 (0.992)
25.4 (1.000)
(
0.5 I RRM
t rr . I
RRM
t rr / Q rr
Waveform
)
6

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