BSM50GD120DN2E3226 Siemens Semiconductor Group, BSM50GD120DN2E3226 Datasheet - Page 2

• Manufacturer Part Number: BSM50GD120DN2E3226
• Description: IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate)
• Manufacturer: Siemens Semiconductor Group

Semiconductor Group
Electrical Characteristics, at T
Parameter
Static Characteristics
Gate threshold voltage
V
Collector-emitter saturation voltage
V
V
V
V
Gate-emitter leakage current
V
AC Characteristics
Transconductance
V
Input capacitance
V
Output capacitance
V
Reverse transfer capacitance
V
Zero gate voltage collector current
GE
GE
GE
CE
CE
GE
CE
CE
CE
CE
= 1200 V, V
= 1200 V, V
= 20 V, I
= 25 V, V
= 25 V, V
= 25 V, V
= V
= 15 V, I
= 15 V, I
= 20 V, V
CE,
I
C
C
C
C
GE
GE
GE
CE
= 2 mA
= 50 A
= 50 A, T
= 50 A, T
GE
GE
= 0 V
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
= 0 V, f = 1 MHz
= 0 V, T
= 0 V, T
j
j
= 25 °C
= 125 °C
j
j
= 25 °C
= 125 °C
j
= 25 °C, unless otherwise specified
2
Symbol
V
V
I
I
g
C
C
C
CES
GES
fs
GE(th)
CE(sat)
iss
oss
rss
min.
-
-
-
-
-
-
-
-
4.5
23
BSM 50 GD120DN2E3226
Values
typ.
-
-
3300
500
220
5.5
2.5
3.1
0.8
4
max.
-
-
-
-
-
6.5
3
3.7
1
200
Jan-10-1997
Unit
V
mA
nA
S
pF