ATF-21170 Agilent Technologies, Inc., ATF-21170 Datasheet
ATF-21170
Related parts for ATF-21170
ATF-21170 Summary of contents
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... Typical at 4 GHz • High Output Power: 23.0 dBm Typical GHz 1 dB • Hermetic Gold-Ceramic Microstrip Package Description The ATF-21170 is a high perfor- mance gallium arsenide Schottky- barrier-gate field effect transistor Electrical Specifications Symbol Parameters and Test Conditions NF Optimum Noise Figure: V ...
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... ATF-21170 Absolute Maximum Ratings Symbol Parameter V Drain-Source Voltage DS V Gate-Source Voltage GS V Gate-Drain Voltage GD I Drain Current DS [2,3] P Power Dissipation T T Channel Temperature CH T Storage Temperature STG Thermal Resistance: Liquid Crystal Measurement: ATF-21170 Noise Parameters: Freq GHz dB 0.5 0.4 1.0 0.5 2.0 0.6 4.0 0.9 8.0 1.2 ATF-21170 Typical Performance, T ...
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Typical Scattering Parameters, Freq GHz Mag. Ang. 0.5 .96 -31 15.5 1.0 .91 -55 14.2 2.0 .82 -95 12.1 3.0 .74 -123 10.2 4.0 .70 -147 5.0 .65 -170 6.0 .64 167 7.0 .65 146 8.0 .66 126 ...