APT5010JLL Advanced Power Technology, APT5010JLL Datasheet

APT5010JLL

Manufacturer Part Number

APT5010JLL

Description

Manufacturer

Advanced Power Technology

Datasheet

1.APT5010JLL.pdf (5 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

APT5010JLL

Manufacturer:

APT

Quantity:

15 500

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

APT5010JLLU2

Manufacturer:

Microsemi Power Products Group

Quantity:

135

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Power MOS 7

enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7

and Q

along with exceptionally fast switching speeds inherent with APT's

patented metal gate structure.

• Lower Input Capacitance

• Lower Miller Capacitance

• Lower Gate Charge, Qg

MAXIMUM RATINGS

STATIC ELECTRICAL CHARACTERISTICS

Symbol

D(on)

DS(on)

GS(th)

DSS

GSS

GSM

DSS

STG

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

. Power MOS 7

POWER MOS 7

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

Pulsed Drain Current

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

On State Drain Current

Drain-Source On-State Resistance

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (V

Gate Threshold Voltage (V

is a new generation of low loss, high voltage, N-Channel

combines lower conduction and switching losses

(Repetitive and Non-Repetitive)

• Increased Power Dissipation

• Easier To Drive

• Popular SOT-227 Package

APT Website - http://www.advancedpower.com

= V

= 25°C

> I

= 25°C

D(on)

, I

= ±30V, V

by significantly lowering R

= 400V, V

= 500V, V

x R

= 2.5mA)

= 0V, I

DS(on)

MOSFET

= 10V, 23A)

= 250µA)

Max, V

= 0V)

= 0V, T

= 0V)

All Ratings: T

= 10V)

= 125°C)

DS(ON)

500V 41A 0.100

= 25°C unless otherwise specified.

APT5010JLL

MIN

500

APT5010JLL

-55 to 150

ISOTOP

1600

3.03

TYP

500

164

±30

±40

378

300

0.100

±100

MAX

100

500

"UL Recognized"

Ohms

Amps

Watts

Amps

UNIT

W/°C

UNIT

Volts

µA

°C

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APT5010JLL Summary of contents

Page 1

... ±30V 0V 2.5mA APT Website - http://www.advancedpower.com APT5010JLL 500V 41A 0.100 DS(ON) ISOTOP ® = 25°C unless otherwise specified. C APT5010JLL 500 41 164 ±30 ±40 378 3.03 -55 to 150 300 41 50 1600 MIN TYP MAX 500 41 0.100 = 125°C) ±100 3 " ...

Page 2

... L = 1.90mH Peak 41A 700A/µ DSS Note Duty Factor Peak 1.0 APT5010JLL UNIT µ J UNIT Amps Volts ns µC V/ns UNIT °C/W = 41A ° 150 ...

Page 3

... -55°C 0.95 0. 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 100 125 150 FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE APT5010JLL 15 &10V 8V 7.5V 7V 6. DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS NORMALIZED 10V @ 23A =10V V GS =20V DRAIN CURRENT (AMPERES) ...

Page 4

... I (A) D FIGURE 15, RISE AND FALL TIMES vs CURRENT V = 330V 46A 125° 100µH E includes ON E off diode reverse recovery 500 GATE RESISTANCE (Ohms) G APT5010JLL 50 1.5 70 ...

Page 5

... Source 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) * Source Dimensions in Millimeters and (Inches) 4,895,810 5,045,903 5,089,434 5,182,234 5,256,583 4,748,103 5,283,202 5,231,474 APT5010JLL 90% Gate Voltage t d(off) Drain Voltage 90 10% Drain Current Switching Energy Hex Nut M4 (4 places) 25.2 (0.992) 25.4 (1.000) 0.75 (.030) 12.6 (.496) 0.85 (.033) 12 ...

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