CEM8207 Chino-Excel Technology Corp, CEM8207 Datasheet

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... CEM8207 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 20V , =20m DS(ON) R =30m DS(ON) Super high dense cell design for extremely low R High power and current handing capability. Surface Mount Package. ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed ...

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... V = 10V, D(ON 1A 4.5V Ω D(OFF) GEN =10V 6A =4. 5-79 CEM8207 C Min Typ Max Unit 20 V µA 1 µ 0 mΩ mΩ 950 P 450 P 135 ...

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... CEM8207 ELECTRICAL CHARACTERISTICS (T Parameter DRAIN-SOURCE DIODE CHARACTERISTICS 5 Diode Forward Voltage Notes a.Surface Mounted on FR4 Board, t 10sec. b.Pulse Test:Pulse Width 300 s, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing =4.5,3.5,2. 0 Drain-to-Source Voltage (V) DS Figure 1. Output Characteristics 2400 ...

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... I , Drain-Source Current (A) DS Figure 7. Transconductance Variation with Drain Current 5 V =4. = Qg, Total Gate Charge (nC) Figure 9. Gate Charge CEM8207 1.15 I =250 A D 1.10 1.05 1.00 0.95 0.90 0.85 -50 - Tj, Junction Temperature ( C) Figure 6. Breakdown Voltage Variation with Temperature 0.1 15 0.4 0 Body Diode Forward Voltage (V) SD Figure 8 ...

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... CEM8207 GEN G Figure 11. Switching Test Circuit D=0.5 1 Duty Cycle=0.5 0.2 -1 0.1 10 0.2 0.05 0.1 0.02 0.1 0.05 0. 0.02 Single Pulse -3 0. Figure 13. Normalized Thermal Transient Impedance Curve Figure 13. Normalized Thermal Transient Impedance Curve d(on OUT V OUT Single Pulse - ...