IS41LV16100S-50T INTEGRATED CIRCUIT SOLUTION, IS41LV16100S-50T Datasheet
IS41LV16100S-50T
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IS41LV16100S-50T Summary of contents
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... These features make the IS41C16100Sand IS41LV16100S ideally suited for high-bandwidth graphics, digital signal processing, high-performance computing systems, and peripheral applications. The IS41C16100S and IS41LV16100S are packaged in a 42-pin 400mil SOJ and 400mil 50- (44-) pin TSOP-2. -45 -50 -60 ...
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... IS41C16100S IS41LV16100S FUNCTIONAL BLOCK DIAGRAM OE WE CAS LCAS CLOCK UCAS GENERATOR RAS RAS CLOCK GENERATOR REFRESH COUNTER ADDRESS BUFFERS A0- CONTROL CAS WE LOGICS DATA I/O BUS COLUMN DECODERS SENSE AMPLIFIERS MEMORY ARRAY 1,048,576 CONTROL LOGIC I/O0-I/O15 Integrated Circuit Solution Inc. DR004-0B ...
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... IS41C16100S IS41LV16100S TRUTH TABLE Function Standby Read: Word Read: Lower Byte Read: Upper Byte Write: Word (Early Write) Write: Lower Byte (Early Write) Write: Upper Byte (Early Write) (1,2) Read-Write (2) EDO Page-Mode Read 1st Cycle: 2nd Cycle: Any Cycle: (1) EDO Page-Mode Write ...
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... IS41C16100S IS41LV16100S Functional Description The IS41C16100S and IS41LV16100S is a CMOS DRAM optimized for high-speed bandwidth, low power applications. During READ or WRITE cycles, each bit is uniquely addressed through the 16 address bits. These are entered ten bits (A0-A9 time. The row address is latched by the Row Address Strobe (RAS). The column address is latched by the Column Address Strobe (CAS) ...
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... IS41C16100S IS41LV16100S ABSOLUTE MAXIMUM RATINGS Symbol Parameters V Voltage on Any Pin Relative to GND T V Supply Voltage CC I Output Current OUT P Power Dissipation D T Commercial Operation Temperature A Industrial Operationg Temperature T Storage Temperature STG Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device ...
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... IS41C16100S IS41LV16100S ELECTRICAL CHARACTERISTICS (Recommended Operating Conditions unless otherwise noted.) Symbol Parameter I Input Leakage Current IL I Output Leakage Current IO V Output High Voltage Level OH V Output Low Voltage Level OL I Standby Current: TTL Standby Current: CMOS Operating Current (2,3,4) ...
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... IS41C16100S IS41LV16100S AC CHARACTERISTICS (1,2,3,4,5,6) (Recommended Operating Conditions unless otherwise noted.) Symbol Parameter t Random READ or WRITE Cycle Time RC Access Time from RAS t RAC Access Time from CAS t CAC t Access Time from Column-Address AA RAS Pulse Width t RAS RAS Precharge Time t RP CAS Pulse Width ...
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... IS41C16100S IS41LV16100S AC CHARACTERISTICS (Continued) (Recommended Operating Conditions unless otherwise noted.) Symbol Parameter Column-Address Setup Time to CAS t ACH Precharge during WRITE Cycle OE Hold Time from WE during t OEH READ-MODIFY-WRITE cycle (15, 22) t Data-In Setup Time DS (15, 22) t Data-In Hold Time DH t READ-MODIFY-WRITE Cycle Time ...
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... IS41C16100S IS41LV16100S Notes initial pause of 200 µs is required after power-up followed by eight RAS refresh cycle (RAS-Only or CBR) before proper device operation is assured. The eight RAS cycles wake-up should be repeated any time the (MIN) and V (MAX) are reference levels for measuring timing of input signals. Transition times, are measured between V ...
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... IS41C16100S IS41LV16100S READ CYCLE RAS t CRP UCAS/LCAS t ASR ADDRESS Row WE I/O OE Note: is referenced from rising edge of RAS or CAS, whichever occurs last OFF RAS t CSH t RSH CAS CLCH RCD RAD RAL t t RAH ASC Column t RCS ...
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... IS41C16100S IS41LV16100S EARLY WRITE CYCLE (OE = DON'T CARE) RAS t CRP UCAS/LCAS t ASR ADDRESS Row WE I/O Integrated Circuit Solution Inc. DR004- RAS t CSH t RSH CAS CLCH RCD RAD RAL RAH ASC CAH t ACH Column t CWL t RWL t WCR t t WCS ...
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... IS41C16100S IS41LV16100S READ WRITE CYCLE (LATE WRITE and READ-MODIFY-WRITE Cycles) RAS t CRP UCAS/LCAS t ASR ADDRESS Row WE I RWC t RAS t CSH t t CAS RCD RAD RAH ASC CAH Column t RWD t t CWD RCS t AWD RAC t CAC t CLZ Open ...
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... IS41C16100S IS41LV16100S EDO-PAGE-MODE READ CYCLE RAS t CRP UCAS/LCAS t t ASR ADDRESS Row t RAH WE Open I/O OE Note: can be measured from falling edge of CAS to falling edge of CAS, or from rising edge of CAS to rising edge of CAS. Both measurements must meet the t specifications. PC Integrated Circuit Solution Inc. ...
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... IS41C16100S IS41LV16100S EDO-PAGE-MODE EARLY-WRITE CYCLE RAS t CRP UCAS/LCAS t t ASR ADDRESS Row t RAH WE I RASP t CSH CAS, RCD CP t CLCH ACH RAD ASC CAH ASC Column Column t CWL t WCS t t WCH WCH WCR t DHR ...
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... IS41C16100S IS41LV16100S EDO-PAGE-MODE READ-WRITE CYCLE RAS t CRP t RCD UCAS/LCAS ASR RAD t t ASC RAH ADDRESS Row t RWD t RCS WE t RAC Open I/O OE Note: can be measured from falling edge of CAS to falling edge of CAS, or from rising edge of CAS to rising edge of CAS. Both 1 ...
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... IS41C16100S IS41LV16100S EDO-PAGE-MODE READ-EARLY-WRITE CYCLE RAS t t CRP RCD UCAS/LCAS ASR RAD t t ASC RAH ADDRESS Row t RCS WE t RAC Open I (Psuedo READ-MODIFY WRITE) t RASP t CSH CAS CAH ASC CAH Column (A) Column ( ...
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... IS41C16100S IS41LV16100S AC WAVEFORMS READ CYCLE (With WE-Controlled Disable) RAS t CRP t RCD UCAS/LCAS ASR RAD t t ASC RAH ADDRESS Row t RCS WE t RAC Open I/O OE RAS RAS RAS RAS-ONLY REFRESH CYCLE RAS RAS t CRP UCAS/LCAS t ASR ADDRESS I/O Integrated Circuit Solution Inc. ...
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... IS41C16100S IS41LV16100S CBR REFRESH CYCLE CBR CBR CBR CBR (Addresses; WE DON'T CARE) RAS t RPC t CP UCAS/LCAS I/O HIDDEN REFRESH CYCLE RAS t CRP UCAS/LCAS t ASR ADDRESS Row I/O OE Notes Hidden Refresh may also be performed after a Write Cycle. In this case LOW and OE = HIGH. ...
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... IS41C16100S IS41LV16100S SELF REFRESH CYCLE (Addresses : WE and OE = DON'T CARE RAS RPC UCAS/LCAS TIMING PARAMETERS -45 Symbol Min. Max — CHD t 7 — — CSR t 100 — RASS t 28 — — RPS t 5 — ...
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... SOJ IS41LV16100S-60T 400mil TSOP-2 Order Part No. Package IS41LV16100S-45KI 400mil SOJ IS41LV16100S-45TI 400mil TSOP-2 IS41LV16100S-50KI 400mil SOJ IS41LV16100S-50TI 400mil TSOP-2 IS41LV16100S-60KI 400mil SOJ IS41LV16100S-60TI 400mil TSOP-2 Integrated Circuit Solution Inc. 7F, NO. 106, SEC. 1, HSIN-TAI 5 HSICHIH TAIPEI COUNTY, TAIWAN, R.O.C. HEADQUARTER: HSIN-CHU, TAIWAN, R.O.C. ...