2N6264 Inchange Semiconductor Company, 2N6264 Datasheet
2N6264
Manufacturer Part Number
2N6264
Description
Manufacturer
Inchange Semiconductor Company
Datasheet
1.2N6264.pdf
(3 pages)
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Inchange Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
・With TO-66 package
・High breakdown voltage
・Low collector saturation voltage
APPLICATIONS
・A wide variety of medium-to-high power,
・Series and shunt regulators
・High-fidelity amplifiers
・Power switching circuits
・Solenoid drivers
PINNING (See Fig.2)
Absolute maximum ratings(Ta=25
THERMAL CHARACTERISTICS
SYMBOL
SYMBOL
high-voltage applications
R
V
V
V
PIN
T
I
P
th j-C
CBO
CEO
EBO
I
CM
I
T
1
2
3
C
stg
B
T
j
Base
Emitter
Collector
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
Thermal resistance junction to case
DESCRIPTION
PARAMETER
℃)
2N6263
2N6264
2N6263
2N6264
2N6263
2N6264
PARAMETER
Open emitter
Open base
Open collector
T
C
=25℃
CONDITIONS
Fig.1 simplified outline (TO-66) and symbol
2N6263
2N6264
Product Specification
2N6263 2N6264
-65~200
VALUE
MAX
8.75
140
170
120
150
150
3.5
20
50
7
3
4
2
UNIT
UNIT
℃/W
W
℃
℃
V
V
V
A
A
A
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2N6264 Summary of contents
Page 1
... Thermal resistance junction to case th j-C Fig.1 simplified outline (TO-66) and symbol ℃) CONDITIONS 2N6263 Open emitter 2N6264 2N6263 Open base 2N6264 Open collector 2N6263 T =25℃ C 2N6264 PARAMETER Product Specification 2N6263 2N6264 VALUE 140 170 120 150 150 -65~200 MAX 2N6263 8.75 2N6264 3.5 ...
Page 2
... C 2N6263 2N6264 2N6263 2N6264 I =0. = 2N6263 V =120Vdc,t=1.0s, CE with Nonrepetitive 2N6264 2 Product Specification 2N6263 2N6264 MIN TYP. 120 140 =-1.5V =-1. 200 0.167 0.417 MAX UNIT V 1.2 V 0.5 2 0.05 1 0.2 100 ...
Page 3
... Inchange Semiconductor Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Product Specification 2N6263 2N6264 ...