MJ423 Inchange Semiconductor Company, MJ423 Datasheet
MJ423
Manufacturer Part Number
MJ423
Description
Isc Silicon Npn Power Transistor
Manufacturer
Inchange Semiconductor Company
Datasheet
1.MJ423.pdf
(2 pages)
INCHANGE Semiconductor
isc
DESCRIPTION
·High Collector-Emitter Sustaining Voltage-
·DC Current Gain-
APPLICATIONS
·Designed for medium to high voltage inverters, converters,
ABSOLUTE MAXIMUM RATINGS(T
THERMAL CHARACTERISTICS
isc Website:www.iscsemi.cn
SYMBOL
SYMBOL
: V
: h
regulators and switching circuits.
R
V
V
V
T
P
T
CBO
CEX
EBO
I
I
th j-c
FE
CEO(SUS)
stg
C
B
Silicon NPN Power Transistor
C
J
B
= 30-90@ I
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation@T
Junction Temperature
Storage Temperature Range
= 325V(Min.)
Thermal Resistance,Junction to Case
C
= 1A
PARAMETER
PARAMETER
a
=25
C
=25℃
℃)
-65~200
VALUE
MAX
400
400
125
150
1.0
10
5
2
UNIT
UNIT
℃/W
W
℃
℃
V
V
V
A
A
isc
Product Specification
MJ423
Related parts for MJ423
MJ423 Summary of contents
Page 1
... C T Junction Temperature J Storage Temperature Range T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER Thermal Resistance,Junction to Case R th j-c isc Website:www.iscsemi.cn =25 ℃) a VALUE UNIT 400 V 400 =25℃ 125 W C ℃ 150 ℃ -65~200 MAX UNIT ℃/W 1.0 isc Product Specification MJ423 ...
Page 2
... Product Specification CONDITIONS I = 100mA 400V;V =1.5V CE EB(off 400V;V =1.5V;T =125℃ CE EB(off 5V 1A 2.5A 0.2A; V =10V; f=1.0MHz C CE MJ423 MIN TYP MAX UNIT 325 V 0.8 V 1.25 V 0.25 mA 0.5 5 2.5 MHz ...