MT28F008B3VG-10B Micron Semiconductor Products, MT28F008B3VG-10B Datasheet
MT28F008B3VG-10B
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MT28F008B3VG-10B Summary of contents
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FLASH MEMORY FEATURES • Eleven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Eight main memory blocks • Smart 3 technology (B3): 3.3V ±0. 3.3V ±0.3V V application programming PP 5V ±10% V application/production programming PP ...
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... A18 ORDER NUMBER AND PART MARKING MT28F008B3VG-10 B MT28F008B3VG-10 T MT28F008B3VG-10 BET MT28F008B3VG-10 TET Micron Technology, Inc., reserves the right to change products or specifications without notice. 2 44-Pin SOP RP# PP A18 2 43 WE# A17 ...
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BYTE# I/O Control Logic Addr. A0-A18/(A19) Buffer/ Latch A9 Power (Current) Control 1 WP# CE# Command OE# Execution WE# Logic RP NOTE: 1. Does not apply to MT28F800B3SG. 2. Does not apply to MT28F008B3. FUNCTIONAL ...
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PIN DESCRIPTIONS 40-PIN TSOP 48-PIN TSOP NUMBERS NUMBERS SYMBOL OE# – 47 BYTE# 21, 20, 19, 18, 25, 24, 23, A0-A18/ 17, 16, 15, 14, 22, ...
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PIN DESCRIPTIONS (continued) 44-PIN SOP NUMBERS SYMBOL TYPE 43 WE# Input 12 CE# Input 44 RP# Input 14 OE# Input 33 BYTE# Input 11, 10 A0-A18/ Input 42, (A19) 41, 40, 39, 38, 37, ...
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TRUTH TABLE (MT28F800B3) FUNCTION Standby RESET READ READ (word mode) READ (byte mode) Output Disable WRITE/ERASE (EXCEPT BOOT BLOCK) ERASE SETUP 3 ERASE CONFIRM WRITE SETUP 4 WRITE (word mode) 4 WRITE (byte mode) 5 READ ARRAY 2, 7 WRITE/ERASE ...
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TRUTH TABLE (MT28F008B3) FUNCTION Standby RESET READ READ Output Disable WRITE/ERASE (EXCEPT BOOT BLOCK) ERASE SETUP 3 ERASE CONFIRM WRITE SETUP 4 WRITE 5 READ ARRAY WRITE/ERASE (BOOT BLOCK) ERASE SETUP 3 ERASE CONFIRM 3, 6 ERASE CONFIRM WRITE SETUP ...
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FUNCTIONAL DESCRIPTION The MT28F800B3 and MT28F008B3 flash memories incorporate a number of features ideally suited for system firmware. The memory array is segmented into individual erase blocks. Each block may be erased without affecting data stored in other blocks. These ...
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WRITE task and when an ERASE has been suspended. Additional error information is set in three other bits: V status, write status and erase status. PP COMMAND EXECUTION LOGIC (CEL) The CEL receives and interprets commands to the device. These ...
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BOOT BLOCK The hardware-protected boot block provides extra security for the most sensitive portions of the firmware. This 16KB block may only be erased or written when the RP# pin is at the specified boot block unlock voltage (V ) ...
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In addition, the identifica- tion register read mode can be reached by applying a super-voltage ( the A9 pin. Using this method, ID the ID register can be read while the device is ...
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COMMAND SET To simplify writing of the memory blocks, the MT28F800B3 and MT28F008B3 incorporate an ISM that controls all internal algorithms for writing and erasing the floating gate memory cells. An 8-bit com- mand set is used to control the ...
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COMMAND EXECUTION Commands are issued to bring the device into differ- ent operational modes. Each mode allows specific op- erations to be performed. Several modes require a sequence of commands to be written before they are reached. The following section ...
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BYTE# is HIGH. Once the ISM status bit (SR7) has been set, the device will be in the status register read mode until another command is issued. ERASE SEQUENCE Executing an ERASE sequence will set all bits within a ...
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WRITE/ERASE CYCLE ENDURANCE The MT28F800B3 and MT28F008B3 are designed and fabricated to meet advanced firmware storage re- quirements. To ensure this level of reliability 3.3V ±0. ±10% during WRITE or ERASE cycles. Due to process ...
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SELF-TIMED WRITE SEQUENCE (WORD OR BYTE WRITE) Start WRITE 40H or 10H WRITE Word or Byte Address/Data STATUS REGISTER READ SR7 = 1? YES Complete Status Check (optional) WRITE Complete NOTE: 1. Sequence may ...
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SELF-TIMED BLOCK ERASE SEQUENCE Start WRITE 20H WRITE D0H, Block Address STATUS REGISTER READ NO SR7 = 1? Suspend ERASE? YES 2 Complete Status Check (optional) 3 ERASE Complete NOTE: 1. Sequence may be ...
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Smart 3 Boot Block Flash Memory Q10.p65 – Rev.3/00 SMART 3 BOOT BLOCK FLASH MEMORY ERASE SUSPEND/RESUME SEQUENCE Start (ERASE in progress) WRITE B0H (ERASE SUSPEND 3. STATUS REGISTER READ NO SR7 = 1? ...
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ABSOLUTE MAXIMUM RATINGS* Voltage on V Supply CC Relative to V ................................ -0.5V to +6V** SS Input Voltage Relative to V ................ -0.5V to +6V Voltage Relative to V ............... -0.5V to +12. RP ...
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CAPACITANCE (T = 25° MHz) A PARAMETER/CONDITION Input Capacitance Output Capacitance READ AND STANDBY CURRENT DRAIN Commercial Temperature (0°C PARAMETER/CONDITION READ CURRENT: WORD-WIDE (CE# 0.2V; OE# • 0.2V MHz; CC Other inputs ...
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READ TIMING PARAMETERS ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS Commercial Temperature (0°C AC CHARACTERISTICS PARAMETER READ cycle time Access time from CE# Access time from OE# Access time from address RP# HIGH to output valid delay OE# or CE# ...
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AC TEST CONDITIONS Input pulse levels ..................................................... Input rise and fall times ................................................ <10ns Input timing reference level ........................................... 1.5V Output timing reference level ........................................ 1.5V Output load ................................... 1 TTL gate and A0-A18/(A19) ...
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V IH A0-A18/(A19 DQ0-DQ7 DQ8-DQ14 RP TIMING PARAMETERS Commercial Temperature ...
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RECOMMENDED DC WRITE/ERASE CONDITIONS Commercial Temperature (0°C PARAMETER/CONDITION V WRITE/ERASE lockout voltage PP V voltage during WRITE/ERASE operation PP V voltage during WRITE/ERASE operation PP V voltage during WRITE/ERASE operation PP Boot block unlock voltage V WRITE/ERASE lockout voltage CC ...
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SPEED-DEPENDENT WRITE/ERASE AC TIMING CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS: WE# (CE#)-CONTROLLED WRITES Commercial Temperature (0°C AC CHARACTERISTICS PARAMETER WRITE cycle time WE# (CE#) HIGH pulse width WE# (CE#) pulse width Address setup time to WE# (CE#) HIGH Address hold ...
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WORD/BYTE WRITE AND ERASE DURATION CHARACTERISTICS PARAMETER Boot/parameter BLOCK ERASE time Main BLOCK ERASE time Main BLOCK WRITE time (byte mode) Main BLOCK WRITE time (word mode) NOTE: 1. Typical values measured Assumes no system overhead. 3. ...
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V IH A0-A18/(A19) Note DQ0-DQ7/ CMD 2 DQ0-DQ15 ...
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V IH A0-A18/(A19) Note CMD DQ0-DQ7/ 2 DQ0-DQ15 ...
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TYP 1 PIN #1 INDEX .010 (0.25) .006 (0.15) 20 .007 (0.18) .005 (0.13) NOTE: 1. All dimensions in inches (millimeters) MAX or typical where noted. 2. Package width and length do not include mold protrusion; allowable mold ...
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TYP 1 PIN #1 INDEX .010 (0.25) .006 (0.15) 24 .007 (0.18) .005 (0.12) NOTE: 1. All dimensions in inches (millimeters) MAX or typical where noted. 2. Package width and length do not include mold protrusion; allowable mold ...
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TYP PIN #1 INDEX NOTE: 1. All dimensions in inches (millimeters) MAX or typical where noted. 2. Package width and length do not include mold protrusion; allowable mold protrusion is .01” per side. 8000 ...