MT28F800B3WG-8B Micron Semiconductor Products, MT28F800B3WG-8B Datasheet
MT28F800B3WG-8B
Related parts for MT28F800B3WG-8B
MT28F800B3WG-8B Summary of contents
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... V application production programming can be used with no loss of performance. Part Number Example: MT28F800B3WG-8 BET 8Mb Smart 3 Boot Block Flash Memory Q10_2.p65 – Rev. 2, Pub. 3/01 PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. SMART 3 BOOT BLOCK FLASH MEMORY ...
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... ORDER NUMBER AND PART MARKING MT28F800B3WG-8 B MT28F800B3WG-8 T MT28F800B3WG-8 BET MT28F800B3WG-8 TET 8Mb Smart 3 Boot Block Flash Memory Q10_2.p65 – Rev. 2, Pub. 3/01 SMART 3 BOOT BLOCK FLASH MEMORY PIN ASSIGNMENT (Top View) 48 A16 47 BYTE DQ15/( ...
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BYTE# I/O Control Logic Addr. A0–A18/(A19) Buffer/ Latch A9 Power (Current) Control 1 WP# CE# Command OE# Execution WE# Logic RP NOTE: 1. Does not apply to MT28F800B3SG. 2. Does not apply to MT28F008B3. FUNCTIONAL ...
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PIN DESCRIPTIONS 44-PIN SOP 40-PIN TSOP 48-PIN TSOP NUMBERS NUMBERS NUMBERS – – 47 11, 10 21, 20, 19, 18, 25, 24, 23, ...
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TRUTH TABLE (MT28F800B3) FUNCTION Standby RESET READ READ (word mode) READ (byte mode) Output Disable WRITE/ERASE (EXCEPT BOOT BLOCK) ERASE SETUP 3 ERASE CONFIRM WRITE SETUP 4 WRITE (word mode) 4 WRITE (byte mode) 5 READ ARRAY WRITE/ERASE (BOOT BLOCK) ...
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TRUTH TABLE (MT28F008B3) FUNCTION Standby RESET READ READ Output Disable WRITE/ERASE (EXCEPT BOOT BLOCK) ERASE SETUP 3 ERASE CONFIRM WRITE SETUP 4 WRITE 5 READ ARRAY WRITE/ERASE (BOOT BLOCK) ERASE SETUP 3 ERASE CONFIRM 3, 6 ERASE CONFIRM WRITE SETUP ...
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FUNCTIONAL DESCRIPTION The MT28F800B3 and MT28F008B3 Flash devices in- corporate a number of features ideally suited for system firmware. The memory array is segmented into indi- vidual erase blocks. Each block may be erased without affecting data stored in other ...
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Commands may be issued to the CEL while the ISM is active. However, there are restrictions on what commands are allowed in this condition. See the Command Execution section for more detail. DEEP POWER-DOWN MODE To allow for ...
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The MT28F800B3 and MT28F008B3 are available in two configurations and top or bottom boot block. The top boot block version supports processors of the x86 variety. The bottom boot block version is intended for 680X0 and RISC applications. Figure 1 ...
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More information describ- ing how to use the two types of inputs to write or erase the device is provided in the Command Execution sec- tion. COMMANDS To perform a command input, OE# must be ...
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ISM STATUS REGISTER The 8-bit ISM status register (see Table 2) is polled to check for WRITE or ERASE completion or any related errors. During or following a WRITE, ERASE or ERASE SUSPEND, a READ operation outputs the status register ...
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COMMAND EXECUTION Commands are issued to bring the device into differ- ent operational modes. Each mode allows specific opera- tions to be performed. Several modes require a sequence of commands to be written before they are reached. The following section ...
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BYTE# is LOW, or FFFFh must be written when BYTE# is HIGH. When the ISM status bit (SR7) has been set, the device is in the status register read mode until another command is issued. ERASE SEQUENCE Executing an ...
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WRITE/ERASE CYCLE ENDURANCE The MT28F800B3 and MT28F008B3 are designed and fabricated to meet advanced firmware storage require- ments. To ensure this level of reliability, V 3.3V ±0. ±10% during WRITE or ERASE cycles. Due to process technology advances, ...
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SELF-TIMED WRITE SEQUENCE (WORD OR BYTE WRITE) Start WRITE 40h or 10h WRITE Word or Byte Address/Data STATUS REGISTER READ SR7 = 1? YES Complete Status Check (optional) WRITE Complete NOTE: 1. Sequence may ...
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SELF-TIMED BLOCK ERASE SEQUENCE Start WRITE 20h WRITE D0h, Block Address STATUS REGISTER READ NO SR7 = 1? Suspend ERASE? YES 2 Complete Status Check (optional) 3 ERASE Complete NOTE: 1. Sequence may be ...
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Smart 3 Boot Block Flash Memory Q10_2.p65 – Rev. 2, Pub. 3/01 SMART 3 BOOT BLOCK FLASH MEMORY ERASE SUSPEND/RESUME SEQUENCE Start (ERASE in progress) WRITE B0h (ERASE SUSPEND 3. STATUS REGISTER READ NO ...
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ABSOLUTE MAXIMUM RATINGS* Voltage on V Supply CC Relative to V ..................................... -0.5V to +4V** SS Input Voltage Relative to V .................... -0.5V to +4V Voltage Relative to V ........................ -0.5V to +5. RP ...
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CAPACITANCE (T = 25º MHz) A PARAMETER/CONDITION Input Capacitance Output Capacitance READ AND STANDBY CURRENT DRAIN Commercial Temperature (0ºC PARAMETER/CONDITION READ CURRENT: WORD-WIDE (CE# 0.2V; OE 0.2V MHz; CC Other inputs 0.2V ...
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READ TIMING PARAMETERS ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS Commercial Temperature (0ºC AC CHARACTERISTICS PARAMETER READ cycle time Access time from CE# Access time from OE# Access time from address RP# HIGH to output valid delay OE# or CE# ...
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V IH A0–A18/(A19 DQ0–DQ15 RWH TIMING PARAMETERS Commercial Temperature (0ºC Extended Temperature (-40ºC ...
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V IH A0–A18/(A19 DQ0–DQ7 DQ8–DQ14 RP TIMING PARAMETERS Commercial Temperature (0ºC ...
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RECOMMENDED DC WRITE/ERASE CONDITIONS Commercial Temperature (0ºC PARAMETER/CONDITION V WRITE/ERASE lockout voltage PP V voltage during WRITE/ERASE operation PP V voltage during WRITE/ERASE operation PP Boot block unlock voltage V WRITE/ERASE lockout voltage CC WRITE/ERASE CURRENT DRAIN Commercial Temperature (0ºC ...
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SPEED-DEPENDENT WRITE/ERASE AC TIMING CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS: WE# (CE#)-CONTROLLED WRITES Commercial Temperature (0ºC AC CHARACTERISTICS PARAMETER WRITE cycle time WE# (CE#) HIGH pulse width WE# (CE#) pulse width Address setup time to WE# (CE#) HIGH Address hold ...
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V IH A0–A18/(A19) Note DQ0–DQ7/ CMD 2 DQ0–DQ15 ...
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V IH A0–A18/(A19) Note CMD DQ0–DQ7/ 2 DQ0–DQ15 ...
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TYP 1 PIN #1 INDEX .010 (0.25) .006 (0.15) 20 .007 (0.18) .005 (0.13) NOTE: 1. All dimensions in inches (millimeters) MAX or typical where noted. 2. Package width and length do not include mold protrusion; allowable mold ...
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TYP 1 PIN #1 INDEX .010 (0.25) .006 (0.15) 24 .007 (0.18) .005 (0.12) NOTE: 1. All dimensions in inches (millimeters) MAX or typical where noted. 2. Package width and length do not include mold protrusion; allowable mold ...
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TYP PIN #1 INDEX NOTE: 1. All dimensions in inches (millimeters) MAX or typical where noted. 2. Package width and length do not include mold protrusion; allowable mold protrusion is .01” per side. 8000 ...
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REVISION HISTORY Rev. 2 .................................................................................................................................................................................... 3/01 • Changed to 0.18µm process • 12V V no longer supported PP • 10V V 12V HH • 0. • RWH changed to 1µs from 800ns t • ...