AT32UC3A364 Atmel Corporation, AT32UC3A364 Datasheet - Page 228

• Manufacturer Part Number: AT32UC3A364
• Manufacturer: Atmel Corporation

Specifications of AT32UC3A364

• Flash (kbytes): 64 Kbytes
• Pin Count: 144
• Max. Operating Frequency: 66 MHz
• Cpu: 32-bit AVR
• # Of Touch Channels: 32
• Hardware Qtouch Acquisition: No
• Max I/o Pins: 110
• Ext Interrupts: 110
• Usb Transceiver: 1
• Usb Speed: Hi-Speed
• Usb Interface: Device + OTG
• Spi: 6
• Twi (i2c): 2
• Uart: 4
• Lin: 4
• Ssc: 1
• Sd / Emmc: 1
• Graphic Lcd: No
• Video Decoder: No
• Camera Interface: No
• Adc Channels: 8
• Adc Resolution (bits): 10
• Adc Speed (ksps): 384
• Resistive Touch Screen: No
• Dac Channels: 2
• Dac Resolution (bits): 16
• Temp. Sensor: No
• Crypto Engine: No
• Sram (kbytes): 128
• Self Program Memory: YES
• External Bus Interface: 1
• Dram Memory: sdram
• Nand Interface: Yes
• Picopower: No
• Temp. Range (deg C): -40 to 85
• I/o Supply Class: 3.0 to 3.6
• Operating Voltage (vcc): 3.0 to 3.6
• Fpu: No
• Mpu / Mmu: Yes / No
• Timers: 6
• Output Compare Channels: 18
• Input Capture Channels: 12
• Pwm Channels: 12
• 32khz Rtc: Yes
• Calibrated Rc Oscillator: Yes

Figure 16-8. Self Refresh Mode Behavior
16.7.6.2
32072G–11/2011
SDRAMC_A[12:0]
SDCKE
SDWE
SDCK
SDCS
RAS
CAS
Low power mode
and Drive Strength (DS) parameters must be set by writing the corresponding fields in the LPR
register, and transmitted to the low power SDRAM device during initialization.
After initialization, as soon as the LPR.PASR, LPR.DS, or LPR.TCSR fields are modified and
self refresh mode is activated, the SDRAMC issues an Extended Load Mode Register command
to the SDRAM and the Extended Mode Register of the SDRAM device is accessed automati-
cally. The PASR/DS/TCSR parameters values are therefore updated before entry into self
refresh mode.
The SDRAM device must remain in self refresh mode for a minimum period of t
remain in self refresh mode for an indefinite period. This is described in
228.
This mode is selected by writing the value two to the LPR.LPCB field. Power consumption is
greater than in self refresh mode. All the input and output buffers of the SDRAM device are
deactivated except SDCKE, which remains low. In contrast to self refresh mode, the SDRAM
device cannot remain in low power mode longer than the refresh period (64 ms for a whole
device refresh operation). As no auto refresh operations are performed by the SDRAM itself, the
SDRAMC carries out the refresh operation. The exit procedure is faster than in self refresh
mode.
This is described in
Figure 16-9 on page
Self Refresh Mode
229.
To the SDRAM Controller
Access Request
T
XSR
Figure 16-8 on page
= 3
RAS
Row
and may
228