ATtiny48 Atmel Corporation, ATtiny48 Datasheet - Page 183

• Manufacturer Part Number: ATtiny48
• Manufacturer: Atmel Corporation

Specifications of ATtiny48

• Flash (kbytes): 4 Kbytes
• Pin Count: 32
• Max. Operating Frequency: 12 MHz
• Cpu: 8-bit AVR
• # Of Touch Channels: 12
• Hardware Qtouch Acquisition: No
• Max I/o Pins: 28
• Ext Interrupts: 28
• Usb Speed: No
• Usb Interface: No
• Spi: 1
• Twi (i2c): 1
• Graphic Lcd: No
• Video Decoder: No
• Camera Interface: No
• Adc Channels: 8
• Adc Resolution (bits): 10
• Adc Speed (ksps): 15
• Analog Comparators: 1
• Resistive Touch Screen: No
• Temp. Sensor: Yes
• Crypto Engine: No
• Sram (kbytes): 0.25
• Eeprom (bytes): 64
• Self Program Memory: YES
• Dram Memory: No
• Nand Interface: No
• Picopower: Yes
• Temp. Range (deg C): -40 to 85
• I/o Supply Class: 1.8 to 5.5
• Operating Voltage (vcc): 1.8 to 5.5
• Fpu: No
• Mpu / Mmu: no / no
• Timers: 2
• Output Compare Channels: 4
• Input Capture Channels: 1
• Pwm Channels: 2
• 32khz Rtc: No
• Calibrated Rc Oscillator: Yes

19. Self-Programming the Flash
19.0.1
19.0.2
8008H–AVR–04/11
Performing Page Erase by SPM
Filling the Temporary Buffer (Page Loading)
The device provides a Self-Programming mechanism for downloading and uploading program
code by the MCU itself. The Self-Programming can use any available data interface and associ-
ated protocol to read code and write (program) that code into the Program memory. The SPM
instruction is disabled by default but it can be enabled by programming the SELFPRGEN fuse
(to “0”).
The Program memory is updated in a page by page fashion. Before programming a page with
the data stored in the temporary page buffer, the page must be erased. The temporary page buf-
fer is filled one word at a time using SPM and the buffer can be filled either before the Page
Erase command or between a Page Erase and a Page Write operation:
Alternative 1, fill the buffer before a Page Erase:
Alternative 2, fill the buffer after Page Erase:
If only a part of the page needs to be changed, the rest of the page must be stored (for example
in the temporary page buffer) before the erase, and then be re-written. Alternative 1 provides an
effective Read-Modify-Write feature which allows the user software to first read the page, do the
necessary changes, and then write back the modified data. If alternative 2 is used, it is not pos-
sible to read the old data while loading since the page is already erased. The temporary page
buffer can be accessed in a random sequence. It is essential that the page address used in both
the Page Erase and Page Write operation is addressing the same page.
To execute Page Erase, set up the address in the Z-pointer, write “00000011” to SPMCSR and
execute SPM within four clock cycles after writing SPMCSR. The data in R1 and R0 is ignored.
The page address must be written to PCPAGE in the Z-register. Other bits in the Z-pointer will
be ignored during this operation.
The CPU is halted during the Page Erase operation.
To write an instruction word, set up the address in the Z-pointer and data in R1:R0, write
“00000001” to SPMCSR and execute SPM within four clock cycles after writing SPMCSR. The
content of PCWORD in the Z-register is used to address the data in the temporary buffer. The
temporary buffer will auto-erase after a Page Write operation or by writing the CTPB bit in
SPMCSR. It is also erased after a system reset. Note that it is not possible to write more than
one time to each address without erasing the temporary buffer.
If the EEPROM is written in the middle of an SPM Page Load operation, all data loaded will be
lost.
• Fill temporary page buffer
• Perform a Page Erase
• Perform a Page Write
• Perform a Page Erase
• Fill temporary page buffer
• Perform a Page Write
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