BT151X-800C NXP Semiconductors, BT151X-800C Datasheet - Page 5

• Manufacturer Part Number: BT151X-800C
• Description: Passivated thyristors in a full pack, plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance
• Manufacturer: NXP Semiconductors

April 2004
Thyristors
Fig.8. Normalised latching current I
Fig.9. Normalised holding current I
2.5
1.5
0.5
2.5
1.5
0.5
I
2.5
1.5
0.5
GT
3
2
1
0
3
2
1
0
Semiconductors
3
2
1
0
-50
-50
-50
(T
IGT(25 C)
IL(25 C)
IH(25 C)
IGT(Tj)
IL(Tj)
IH(Tj)
j
Fig.7. Normalised gate trigger current
)/ I
GT
versus junction temperature T
versus junction temperature T
(25˚C), versus junction temperature T
0
0
0
BT145
Tj / C
Tj / C
Tj / C
50
50
50
100
100
100
H
L
(T
(T
j
j
)/ I
)/ I
j
j
.
.
H
L
(25˚C),
(25˚C),
150
150
150
j
.
4
Fig.12. Typical, critical rate of rise of off-state voltage,
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
10000
(A)
I T
30
20
10
1000
0.001
0
100
0.01
10
0
0.1
10
10us
T j = 125 °C
1
0
T j = 25 °C
R s = 0.0304 ohms
dVD/dt (V/us)
dV
V o = 1.06 V
Zth j-hs (K/W)
D
/dt versus junction temperature T
0.1ms
0.5
without heatsink compound
pulse width t
1ms
50
tp / s
10ms
Tj / C
1
BT151X series C
P
D
typ
p
Product specification
.
with heatsink compound
0.1s
100
t p
1.5
RGK = 100 Ohms
gate open circuit
1s
th j-hs
max
V T (V)
t
, versus
Rev 1.000
j
.
10s
150
2