BT134W-600E NXP Semiconductors, BT134W-600E Datasheet - Page 2

Planar passivated sensitive gate four quadrant triac in a SOT223 surface-mountable plastic package

BT134W-600E

Manufacturer Part Number
BT134W-600E
Description
Planar passivated sensitive gate four quadrant triac in a SOT223 surface-mountable plastic package
Manufacturer
NXP Semiconductors
Datasheet

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1;3 Semiconductors
GENERAL DESCRIPTION
Glass passivated, sensitive gate triacs
in a plastic envelope suitable for
surface mounting, intended for use in
general
switching
applications, where high sensitivity is
required in all four quadrants.
PINNING - SOT223
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/μs.
August 1997
Triacs
sensitive gate
SYMBOL PARAMETER
V
I
I
I
dI
I
V
P
P
T
T
T(RMS)
TSM
2
GM
PIN
DRM
t
GM
GM
G(AV)
stg
j
tab
T
1
2
3
/dt
main terminal 1
main terminal 2
gate
main terminal 2
purpose
and
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
2
t for fusing
DESCRIPTION
phase
bidirectional
control
QUICK REFERENCE DATA
PIN CONFIGURATION
CONDITIONS
full sine wave; T
full sine wave; T
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
dI
over any 20 ms period
TM
SYMBOL
V
I
I
G
T(RMS)
TSM
DRM
/dt = 0.2 A/μs
= 1.5 A; I
G
1
PARAMETER
Repetitive peak off-state voltages
RMS on-state current
Non-repetitive peak on-state current
= 0.2 A;
1
sp
j
= 25 ˚C prior to
≤ 108 ˚C
2
4
T2+ G+
T2+ G-
T2- G-
T2- G+
3
MIN.
-40
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SYMBOL
BT134W-
T2
-500
500
BT134W series E
1
Product specification
MAX.
150
125
0.5
0.5
MAX. MAX. UNIT
10
11
50
50
50
10
500E
1
2
5
5
500
10
1
-600
600
600E
1
600
10
1
Rev 1.200
UNIT
G
A/μs
A/μs
A/μs
A/μs
T1
A
W
W
˚C
˚C
V
A
A
A
A
V
2
V
A
A
s

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