BLF6G22L-40BN NXP Semiconductors, BLF6G22L-40BN Datasheet - Page 10

• Manufacturer Part Number: BLF6G22L-40BN
• Description: 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
9. Abbreviations
10. Revision history
Table 11.
BLF6G22L-40BN
Product data sheet
Document ID
BLF6G22L-40BN v.1
Revision history
Table 10.
Acronym
3GPP
CCDF
CW
DPCH
ESD
IMD
LDMOS
PAR
PDPCH
RF
SMD
VSWR
W-CDMA
Abbreviations
All information provided in this document is subject to legal disclaimers.
Release date
20100830
Description
3rd Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Waveform
Dedicated Physical CHannel
ElectroStatic Discharge
InterModulation Distortion
Laterally Diffused Metal-Oxide Semiconductor
Peak-to-Average power Ratio
transmission Power of the Dedicated Physical CHannel
Radio Frequency
Surface Mounted Device
Voltage Standing-Wave Ratio
Wideband Code Division Multiple Access
Rev. 1 — 30 August 2010
Data sheet status
Product data sheet
BLF6G22L-40BN
Change notice
-
Power LDMOS transistor
© NXP B.V. 2010. All rights reserved.
Supersedes
-
10 of 13