LT1016IS8 Linear Technology, LT1016IS8 Datasheet - Page 4

• Manufacturer Part Number: LT1016IS8
• Description: IC COMPARATOR 10NS HI-SPD 8-SOIC
• Manufacturer: Linear Technology
• Series: UltraFast™r
• Type: General Purposer

Specifications of LT1016IS8

• Number Of Elements: 1
• Output Type: CMOS, Complementary, TTL
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

LT1016
TYPICAL PERFOR A CE CHARACTERISTICS
4
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
– 2
– 4
– 6
80
70
60
50
40
30
20
10
0
6
4
2
0
– 2.5
0
–50
Latch Set-Up Time vs
Temperature
Gain Characteristics
0
Propagation Delay vs Source
Resistance
STEP SIZE = 800mV
V
T
OVERDRIVE = 20mV
EQUIVALENT INPUT
C
V
I
T
OUT
J
S
S
LOAD
CAPACITANCE IS ≈ 3.5pF
J
= 25°C
–25
= ± 5V
= ± 5V
= 125°C
DIFFERENTIAL INPUT VOLTAGE (mV)
500
= 0V
–1.5
JUNCTION TEMPERATURE (°C)
= 10pF
SOURCE RESISTANCE (Ω)
T
0
J
400mV
200mV
100mV
1k
= – 55°C
– 0.5
25
1.5k
50
T
0.5
J
= 25°C
2k
75
W
1.5
V
I
OUT
2.5k
S
100
= ± 5V
1016 G01
= 0
1016 G07
1016 G04
U
125
2.5
3k
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
25
20
15
10
25
20
15
10
5
0
0
5
0
4.4
Output Low Voltage (V
Output Sink Current
0
0
Propagation Delay vs Input
Overdrive
Propagation Delay vs Supply
Voltage
V
T
V
OVERDRIVE = 5mV
C
V
T
V
C
V
V
J
STEP
LOAD
–
J
S
IN
S
STEP
LOAD
= 25°C
= – 5V
2
RISING EDGE t
= 25°C
= ± 5V
= ±5V
= 30mV
4.6
POSITIVE SUPPLY VOLTAGE (V)
= 100mV
= 10pF
= 100mV
10
OUTPUT SINK CURRENT (mA)
= 10pF
T
4
J
= 125°C
6
4.8
OVERDRIVE (mV)
T
20
8
J
PDLH
= 25°C
FALLING EDGE t
5.0
10
12
30
T
5.2
OL
J
14
= – 55°C
) vs
16
40
PDHL
5.4
1016 G05
18
1016 G02
1016 G08
5.6
20
50
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
30
25
20
15
10
25
20
15
10
5
0
5
0
–50
Output High Voltage (V
Output Source Current
0
0
Propagation Delay vs Load
Capacitance
Propagation Delay vs
Temperature
V
T
I
V
OVERDRIVE = 5mV
V
V
OUT
V
OVERDRIVE = 5mV
STEP SIZE = 100mV
C
J
S
STEP
FALLING OUTPUT t
S
IN
S
LOAD
= 25°C
2
= ± 5V
–25
= ± 5V
= ± 5V
= – 30mV
= 0
OUTPUT LOAD CAPACITANCE (pF)
T
OUTPUT SOURCE CURRENT (mA)
= 100mV
J
JUNCTION TEMPERATURE (°C)
10
4
= 10pF
= – 55°C
0
6
RISING OUTPUT t
t
PDHL
20
8
25
T
J
= 25°C
PDHL
10
50
t
PDLH
30
12
OH
14
PDLH
75
) vs
T
J
40
16
= 125°C
100
18
1016 G03
1016 G06
1016 G09
125
20
50