AP4501GM Advanced Power Electronics Corp., AP4501GM Datasheet - Page 7

• Manufacturer Part Number: AP4501GM
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost- effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4501GM

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 28
• Rds(on) / Max(m?) Vgs@4.5v: 42
• Qg (nc): 8.4
• Qgs (nc): 1.4
• Qgd (nc): 4.7
• Id(a): 7
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

P-Channel
0.01
100
0.1
12
10
10
8
6
4
2
0
1
0.0
0.1
Fig 11. Switching Time Waveform
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
90%
10%
V
V
GS
DS
V
-V
I
Single Pulse
D
DS
4.0
T
DS
= -5.3A
Q
A
= -15V
t
=25
, Drain-to-Source Voltage (V)
G
d(on)
, Total Gate Charge (nC)
1
o
C
8.0
t
r
12.0
10
t
d(off)
16.0
t
f
100ms
100us
10ms
1ms
DC
1 s
20.0
100
Fig 10. Effective Transient Thermal Impedance
1000
0.01
100
0.1
10
1
0.0001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
-4.5V
30
V
0.01
0.05
0.02
0.2
0.1
Duty factor=0.5
G
0.001
Single Pulse
5
-V
Q
GS
DS
0.01
t , Pulse Width (s)
9
, Drain-to-Source Voltage (V)
Q
Q
0.1
13
G
GD
-30
Charge
17
1
P
AP4501GM
DM
Duty factor = t/T
Peak T
R
thja
10
21
=135
j
= P
t
o
C/W
DM
f=1.0MHz
T
x R
100
25
thja
+ T
C
Q
C
C
a
iss
rss
oss
1000
29
7