Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost- effectiveness

AP4501GM

Manufacturer Part NumberAP4501GM
DescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost- effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP4501GM datasheet
 

Specifications of AP4501GM

Vds30VVgs±20V
Rds(on) / Max(m?) Vgs@10v28Rds(on) / Max(m?) Vgs@4.5v42
Qg (nc)8.4Qgs (nc)1.4
Qgd (nc)4.7Id(a)7
Pd(w)2ConfigurationComplementary N-P
PackageSO-8  
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Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Performance
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
V
Drain-Source Voltage
DS
V
Gate-Source Voltage
GS
I
@T
=25℃
Continuous Drain Current
D
A
I
@T
=70℃
Continuous Drain Current
D
A
I
Pulsed Drain Current
DM
P
@T
=25℃
Total Power Dissipation
D
A
Linear Derating Factor
T
Storage Temperature Range
STG
T
Operating Junction Temperature Range
J
Thermal Data
Symbol
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
RoHS-compliant Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-CH BV
D2
D2
D1
D1
G2
P-CH BV
S2
G1
SO-8
S1
N-channel
30
+20
3
7.0
3
5.8
1
20
Parameter
3
AP4501GM
30V
DSS
R
28mΩ
DS(ON)
I
7A
D
-30V
DSS
R
50mΩ
DS(ON)
I
-5.3A
D
D1
D2
G2
G1
S1
S2
Rating
Units
P-channel
-30
V
+20
V
-5.3
A
-4.7
A
-20
A
2
W
0.016
W/℃
-55 to 150
-55 to 150
Value
Unit
℃/W
62.5
201009015
1

AP4501GM Summary of contents

  • Page 1

    ... Data and specifications subject to change without notice RoHS-compliant Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N- P- SO-8 S1 N-channel 30 +20 3 7 Parameter 3 AP4501GM 30V DSS R 28mΩ DS(ON -30V DSS R 50mΩ DS(ON) I -5. Rating Units P-channel ...

  • Page 2

    ... AP4501GM N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS 2 Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

  • Page 3

    ... =- =-15V DS V =-4. =-15V =3.3Ω,V =-10V =15Ω = =-25V DS f=1.0MHz Test Conditions 2 I =-2.6A =-5A dI/dt=100A/µs AP4501GM Min. Typ. Max. Units - = = -25 = +100 - ...

  • Page 4

    ... AP4501GM N-Channel 20 ℃ Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Fig 5 ...

  • Page 5

    ... DC 0.001 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance d(off) f Fig 12. Gate Charge Waveform AP4501GM f=1.0MHz C iss C oss C rss Drain-to-Source Voltage ( Single Pulse Duty factor = t/T -30 Peak ...

  • Page 6

    ... AP4501GM P-Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics -4 = Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Fig 5 ...

  • Page 7

    ... DC Single Pulse 0.01 100 0.0001 0.001 Fig 10. Effective Transient Thermal Impedance V G -4. d(off) f Fig 12. Gate Charge Waveform AP4501GM f=1.0MHz C iss C oss C rss Drain-to-Source Voltage ( Duty factor = t/T -30 Peak ...