AP4506GEH Advanced Power Electronics Corp., AP4506GEH Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP4506GEH

Manufacturer Part Number
AP4506GEH
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4506GEH

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
24
Rds(on) / Max(m?) Vgs@4.5v
32
Qg (nc)
8.3
Qgs (nc)
1.5
Qgd (nc)
4
Id(a)
9
Pd(w)
3.1
Configuration
Complementary N-P
Package
TO-252-4L

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP4506GEH
Manufacturer:
APNEC
Quantity:
30 000
Part Number:
AP4506GEH-HF
Manufacturer:
APEC
Quantity:
3 550
▼ Simple Drive Requirement
▼ Good Thermal Performance
▼ Fast Switching Performance
V
V
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
I
Thermal Data
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
D
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Maximum Thermal Resistance, Junction-ambient
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Parameter
Parameter
1
S1
G1
3
3
S2
G2
TO-252-4L
D1/D2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-channel
3
N-CH BV
P-CH BV
RoHS-compliant Product
+20
7.2
30
50
9
-55 to 150
-55 to 150
G1
Rating
3.1
R
I
R
I
D
D
D1
P-channel
DS(ON)
DS(ON)
DSS
DSS
Value
+20
-6.4
-30
-50
S1
40
-8
8
AP4506GEH
G2
24mΩ
36mΩ
200902103
-30V
Units
℃/W
℃/W
30V
-8A
Unit
9A
W
V
V
A
A
A
D2
S2
1

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AP4506GEH Summary of contents

Page 1

... Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET D1/ TO-252-4L N-channel Parameter 3 AP4506GEH RoHS-compliant Product N-CH BV 30V DSS R 24mΩ DS(ON P-CH BV -30V DSS R 36mΩ DS(ON) I ...

Page 2

... AP4506GEH N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... =- =-24V DS V =-4. =-15V =3.3Ω, =3Ω = =-25V DS f=1.0MHz Test Conditions 2 I =-5A =-5A dI/dt=-100A/µs AP4506GEH Min. Typ. - =-250uA - 12.6 - 2 =-10V - ...

Page 4

... AP4506GEH N-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0 Source-to-Drain Voltage (V) SD Fig 5. Forward Characteristic of ...

Page 5

... DC 0.01 0.01 10 100 0.0001 Fig 10. Effective Transient Thermal Impedance 4. d(off) f Fig 12. Gate Charge Waveform AP4506GEH f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0 Duty factor = t/T Peak thja Rthja=75℃/W Single Pulse ...

Page 6

... AP4506GEH P-Channel Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics ,Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 7

... Fig 8. Typical Capacitance Characteristics 1 100us 1ms 10ms 100ms 0.1 1s 0.02 0.01 DC 0.01 10 100 0.001 Fig 10. Effective Transient Thermal Impedance -4. d(off) f Fig 12. Gate Charge Waveform AP4506GEH f=1.0MHz Drain-to-Source Voltage (V) DS Duty factor=0.5 0.2 0.1 0. Single Pulse Duty factor = t/T Peak ...

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