AP4506GEH Advanced Power Electronics Corp., AP4506GEH Datasheet - Page 4

• Manufacturer Part Number: AP4506GEH
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4506GEH

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 24
• Rds(on) / Max(m?) Vgs@4.5v: 32
• Qg (nc): 8.3
• Qgs (nc): 1.5
• Qgd (nc): 4
• Id(a): 9
• Pd(w): 3.1
• Configuration: Complementary N-P
• Package: TO-252-4L

N-Channel
AP4506GEH
28
26
24
22
20
18
50
40
30
20
10
10
0
8
6
4
2
0
0
0
2
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
0.2
V
Reverse Diode
V
1
DS
V
SD
4
GS
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
, Gate-to-Source Voltage (V)
0.4
T
j
=150
2
o
0.6
6
C
T
C
T
= 25
3
I
C
D
=25
=4A
0.8
o
C
o
C
8
T
4
j
V
=25
1
G
=3.0V
7.0V
5.0V
4.5V
10V
o
C
1.2
5
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
50
40
30
20
10
1.6
1.2
0.8
0.4
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
T
I
G
D
C
=10V
=6A
= 150
v.s. Junction Temperature
Junction Temperature
V
o
DS
T
C
T
0
0
j
j
, Drain-to-Source Voltage (V)
, Junction Temperature (
, Junction Temperature (
2
50
50
4
100
100
o
o
C)
C)
V
G
=3.0V
7.0V
5.0V
4.5V
10V
150
6
150
4