AP4506GEH Advanced Power Electronics Corp., AP4506GEH Datasheet - Page 5

• Manufacturer Part Number: AP4506GEH
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4506GEH

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 24
• Rds(on) / Max(m?) Vgs@4.5v: 32
• Qg (nc): 8.3
• Qgs (nc): 1.5
• Qgd (nc): 4
• Id(a): 9
• Pd(w): 3.1
• Configuration: Complementary N-P
• Package: TO-252-4L

N-Channel
0.01
100
12
0.1
10
8
4
0
1
0.1
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
V
90%
10%
V
Single Pulse
DS
T
GS
A
=25
Q
V
5
o
t
DS
G
d(on)
C
V
I
, Total Gate Charge (nC)
DS
, Drain-to-Source Voltage (V)
1
D
=6A
=24V
t
r
10
10
t
d(off)
15
t
f
100ms
100us
10ms
1ms
DC
1s
20
100
Fig 10. Effective Transient Thermal Impedance
1000
0.01
100
0.1
10
0.0001
1
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
0.01
0.2
0.05
0.1
0.02
V
Single Pulse
Duty factor=0.5
G
5
0.001
V
Q
DS
GS
t , Pulse Width (s)
9
, Drain-to-Source Voltage (V)
0.01
Q
Q
13
G
GD
Charge
0.1
17
AP4506GEH
P
1
DM
Duty factor = t/T
Peak T
Rthja=75℃/W
21
j
= P
t
DM
f=1.0MHz
T
x R
10
25
thja
+ T
Q
C
C
a
C
oss
rss
iss
100
29
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