AP4506GEH Advanced Power Electronics Corp., AP4506GEH Datasheet - Page 6

• Manufacturer Part Number: AP4506GEH
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4506GEH

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 24
• Rds(on) / Max(m?) Vgs@4.5v: 32
• Qg (nc): 8.3
• Qgs (nc): 1.5
• Qgd (nc): 4
• Id(a): 9
• Pd(w): 3.1
• Configuration: Complementary N-P
• Package: TO-252-4L

P-Channel
AP4506GEH
50
40
30
20
10
45
41
37
33
29
25
10
0
8
6
4
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
0
2
0
Fig 5. Forward Characteristic of
T
C
= 25
0.2
o
Reverse Diode
-V
1
C
-V
-V
SD
4
T
GS
DS
0.4
j
, Source-to-Drain Voltage (V)
=150
,Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
2
o
0.6
C
6
T
0.8
I
C
3
D
=25
=-3A
T
o
1
C
j
8
=25
V
4
G
o
= - 3.0V
C
1.2
-7.0V
-5.0V
-4.5V
-10V
10
1.4
5
1.6
1.4
1.2
1.0
0.8
0.6
50
40
30
20
10
1.6
1.2
0.8
0.4
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
T
I
V
C
D
G
= 150
=-5A
=-10V
1
T
v.s. Junction Temperature
Junction Temperature
-V
o
j
C
, Junction Temperature (
T
DS
0
0
j
, Junction Temperature (
, Drain-to-Source Voltage (V)
2
3
50
50
4
o
C)
100
100
o
V
C)
G
5
= - 3.0V
-7.0V
-5.0V
-4.5V
-10V
6
150
150
6