AP4509AGM-HF Advanced Power Electronics Corp., AP4509AGM-HF Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP4509AGM-HF

Manufacturer Part Number
AP4509AGM-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4509AGM-HF

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
10
Rds(on) / Max(m?) Vgs@4.5v
16
Qg (nc)
12
Qgs (nc)
2.5
Qgd (nc)
7.5
Id(a)
11.2
Pd(w)
2
Configuration
Complementary N-P
Package
SO-8
▼ Simple Drive Requirement
▼ Low Gate Charge
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
D1
3
3
D1
SO-8
D2
D2
S1
G1
S2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
G2
N-channel
3
N-CH BV
P-CH BV
+20
11.2
30
9.0
40
G1
Halogen-Free Product
-55 to 150
-55 to 150
Rating
2
R
I
R
I
D
D
D1
P-channel
AP4509AGM-HF
DS(ON)
DS(ON)
DSS
DSS
Value
S1
62.5
+20
-8.0
-6.4
-30
-30
G2
10mΩ
21mΩ
200912221
11.2A
-30V
Units
℃/W
-8A
30V
Unit
W
D2
V
V
A
A
A
S2
1

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AP4509AGM-HF Summary of contents

Page 1

... Data and specifications subject to change without notice N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N- P- SO-8 N-channel 30 +20 3 11 Parameter 3 AP4509AGM-HF Halogen-Free Product 30V DSS R 10mΩ DS(ON) I 11.2A D -30V DSS R 21mΩ DS(ON Rating Units ...

Page 2

... AP4509AGM-HF N-CH Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS 2 Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

... D V =-15V DS V =-4. =-15V =3.3Ω,V =-10V =15Ω = =-25V DS f=1.0MHz f=1.0MHz Test Conditions 2 I =-1.7A =-7A dI/dt=100A/µs AP4509AGM-HF Min. Typ. Max. Units - = -10 = +100 - 10 6 ...

Page 4

... AP4509AGM-HF N-Channel 40 ℃ Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 5

... DC 0.001 10 100 0.0001 0.001 Fig 10. Effective Transient Thermal Impedance d(off) f Fig 12. Gate Charge Waveform AP4509AGM-HF f=1.0MHz C iss C oss C rss Drain-to-Source Voltage ( Single Pulse Duty factor = t/T -30 Peak ...

Page 6

... AP4509AGM-HF P-Channel = Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics = Gate-to-Source Voltage (V) GS Fig 3. On-Resistance v.s. Gate Voltage =150 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Fig 5 ...

Page 7

... Single Pulse 0.001 10 100 0.0001 0.001 Fig 10. Effective Transient Thermal Impedance V G -4. d(off) f Fig 12. Gate Charge Waveform AP4509AGM-HF f=1.0MHz C iss C oss C rss Drain-to-Source Voltage ( Duty factor = t/T -30 Peak ...

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