AP4509AGM-HF Advanced Power Electronics Corp., AP4509AGM-HF Datasheet - Page 4

• Manufacturer Part Number: AP4509AGM-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4509AGM-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 10
• Rds(on) / Max(m?) Vgs@4.5v: 16
• Qg (nc): 12
• Qgs (nc): 2.5
• Qgd (nc): 7.5
• Id(a): 11.2
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

N-Channel
AP4509AGM-HF
40
30
20
10
16
14
12
10
0
8
6
8
6
4
2
0
0
2
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
0.2
Reverse Diode
V
V
V
SD
GS
4
1
DS
T
0.4
, Source-to-Drain Voltage (V)
, Gate-to-Source Voltage (V)
j
, Drain-to-Source Voltage (V)
=150
T
0.6
o
A
C
=25
6
2
℃
T
0.8
I
A
D
= 25
= 7A
T
j
o
=25
1
C
8
3
o
V
C
1.2
G
= 4.0V
5.0V
7.0V
6.0V
10V
1.4
10
4
1.4
1.2
1.0
0.8
0.6
0.4
40
30
20
10
1.8
1.4
1.0
0.6
0
-50
0
-50
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
I
30
D
G
=10A
=10V
V
T
v.s. Junction Temperature
Junction Temperature
1
T
DS
j
j
, Junction Temperature (
0
0
, Junction Temperature (
, Drain-to-Source Voltage (V)
2
-30
50
50
T
A
=150
3
℃
o
100
100
o
C)
C)
V
4
G
=4.0V
7.0V
6.0V
5.0V
10V
5
150
150
4