AP4509AGM-HF Advanced Power Electronics Corp., AP4509AGM-HF Datasheet - Page 5

• Manufacturer Part Number: AP4509AGM-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4509AGM-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 10
• Rds(on) / Max(m?) Vgs@4.5v: 16
• Qg (nc): 12
• Qgs (nc): 2.5
• Qgd (nc): 7.5
• Id(a): 11.2
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

N-Channel
0.01
100
0.1
10
10
8
6
4
2
0
1
0.01
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
Operation in this
I
V
area limited by
Single Pulse
V
90%
10%
D
T
V
DS
R
= 10 A
DS(ON)
DS
GS
A
= 15 V
=25
4
V
o
DS
Q
0.1
C
t
d(on)
G
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
8
t
r
12
1
16
t
d(off)
10
t
f
20
100ms
100us
10ms
1ms
DC
1s
100
24
Fig 10. Effective Transient Thermal Impedance
0.001
0.01
1000
0.1
800
600
400
200
1
0.0001
0
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
30
0.02
0.01
V
Duty factor=0.5
0.2
0.1
0.05
0.001
G
Single Pulse
5
Q
V
DS
GS
0.01
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
Q
0.1
13
G
AP4509AGM-HF
GD
Charge
-30
17
1
P
DM
Duty factor = t/T
Peak T
R
21
10
thja
=135
j
= P
t
o
C/W
f=1.0MHz
DM
T
x R
25
100
thja
C
C
C
+ T
Q
oss
rss
iss
a
1000
29
5