AP6679BGH-HF Advanced Power Electronics Corp., AP6679BGH-HF Datasheet - Page 4

• Manufacturer Part Number: AP6679BGH-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP6679BGH-HF

• Vds: -30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 9
• Rds(on) / Max(m?) Vgs@4.5v: 15
• Qg (nc): 44
• Qgs (nc): 6.5
• Qgd (nc): 28.5
• Id(a): -63
• Pd(w): 54.3
• Configuration: Single P
• Package: TO-252

AP6679BGH/J-HF
1000
100
10
10
8
6
4
2
0
1
0.1
0
Fig 7. Gate Charge Characteristics
Fig 11. Switching Time Waveform
Operation in this area
Fig 9. Maximum Safe Operating Area
limited by R
10%
90%
Single Pulse
V
V
T
GS
DS
C
=25
DS(ON)
-V
Q
o
20
C
DS
G
t
d(on)
V
, Total Gate Charge (nC)
I
, Drain-to-Source Voltage (V)
DS
D
1
=-30A
=-24V
t
r
40
10
t
d(off)
60
t
f
100ms
100us
10ms
1ms
DC
100
80
Fig 10. Effective Transient Thermal Impedance
5000
4000
3000
2000
1000
0.01
0.1
0.00001
0
1
Fig 8. Typical Capacitance Characteristics
1
-4.5V
Fig 12. Gate Charge Waveform
0.01
0.02
V
0.1
0.05
0.2
Duty factor=0.5
G
Single Pulse
5
0.0001
Q
-V
GS
DS
9
0.001
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
Q
13
G
GD
0.01
Charge
17
0.1
P
DM
Duty factor = t/T
Peak T
21
j
= P
t
DM
f=1.0MHz
T
x R
1
25
thjc
C
C
C
+ T
Q
oss
iss
rss
C
10
29
4