Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness

AP6679BGH-HF

Manufacturer Part NumberAP6679BGH-HF
DescriptionAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
ManufacturerAdvanced Power Electronics Corp.
AP6679BGH-HF datasheet
 


Specifications of AP6679BGH-HF

Vds-30VVgs±20V
Rds(on) / Max(m?) Vgs@10v9Rds(on) / Max(m?) Vgs@4.5v15
Qg (nc)44Qgs (nc)6.5
Qgd (nc)28.5Id(a)-63
Pd(w)54.3ConfigurationSingle P
PackageTO-252  
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AP6679BGH/J-HF
10
8
V
=-24V
DS
I
=-30A
D
6
4
2
0
0
20
40
Q
, Total Gate Charge (nC)
G
Fig 7. Gate Charge Characteristics
1000
Operation in this area
limited by R
100
DS(ON)
10
o
T
=25
C
C
Single Pulse
1
0.1
1
-V
, Drain-to-Source Voltage (V)
DS
Fig 9. Maximum Safe Operating Area
V
DS
90%
10%
V
GS
t
t
r
d(on)
Fig 11. Switching Time Waveform
5000
4000
3000
2000
1000
0
1
60
80
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
100us
0.1
0.1
0.05
1ms
0.02
0.01
10ms
100ms
DC
0.01
10
100
0.00001
Fig 10. Effective Transient Thermal Impedance
V
G
-4.5V
t
t
d(off)
f
Fig 12. Gate Charge Waveform
f=1.0MHz
C
iss
C
oss
C
rss
5
9
13
17
21
25
-V
, Drain-to-Source Voltage (V)
DS
P
DM
t
T
Duty factor = t/T
Peak T
= P
x R
+ T
j
DM
thjc
C
Single Pulse
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Q
G
Q
Q
GD
GS
Q
Charge
29
10
4